# Part reliability

Source: [https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html)

This topic provides the reliability data, including a definition of the qualification
            samples and a summary of qualification test results.

## Reliability qualifications summary

Source: [https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html)

The QCS615 device has been qualified to AEC-Q100 Grade 3 specification. The qualification
            results are summarized in the following table.

| Stress test | ABV | Test number | Test method | Test conditions/pre and post ATE (identify temperature,<br>                            RH, and bias) | Requirements | Requirements | Results fails/total S.S | Comments |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| Stress test | ABV | Test number | Test method | Test conditions/pre and post ATE (identify temperature,<br>                            RH, and bias) | S.S per lot | No. of lots | Results fails/total S.S | Comments |
| ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** | ***Test group A: accelerated                                    environment stress tests*** |
| Preconditioning | PC | A1 | JEDEC-J-STD-020, JESD22-A113 | MSL3, 3x reflow (pre and post ATE at R) | 77 | 6 | 0F/462 |  |
| Preconditioning + bias HAST | BHAST | A2 | JEDEC-JESD22-A110 | 130°C/85% RH for 96 hours (pre and post ATE at R and H) | 77 | 3 | 0F/231 |  |
| Preconditioning + unbiased HAST/temperaturehumidity | UHAST | A3 | JEDEC-JESD22-A118 | 85°C/85%RH for 1000 hours (pre and post ATE at R) | 77 | 3 | 0F/231 |  |
| Preconditioning + temperature cycle | TC | A4 | JEDEC-JESD22-A104 | Ta = -55°C to +125°C for 500<br><br><br>                            <br>cycles (pre and post ATE at R and H) | 77 | 6 | 0F/462 | Passes extended stress readpoint to TC 1000 cycles |
| Preconditioning power temperature cycling | PTC | A5 | JEDEC-JESD22-A105 | Ta = -40°C to +105°C for 1000 cycles (Pre and Post ATE at R and<br>                            H) | 45 | 1 | 0F/45 |  |
| High temperature storage life | HTSL | A6 | JEDEC-JESD22-A103 | Ta = +150°C for 500 hours (pre and post ATE at R and H) | 77 | 6 | 0F/462 | Passes extended stress readpoint to HTSL 1000 hours |
| ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** | ***Test group B: accelerated lifetime                                    simulation tests*** |
| High temperature operating life | HTOL | B1 | JEDEC-JESD22-A108 | Tj = 125°C for 1000 hours (pre and post ATE at R, C, and H) | 77 | 3 | 0F/231 | Drift Analysis performed from T0 to T1000 hours. All shifts within<br>                            acceptable limits |
| Early life failure rate | ELFR | B2 | AECQ100-008 | Tj = 125°C for 48 hours (pre and post ATE at R and H) | 800 | 3 | 0F/2400 |  |
| NVM endurance, data retention, and operational life | EDR | B3 | – | – | – | – | – | No NVM memory on device |
| ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** | ***Test group C: package assembly                                    integrity tests*** |
| Wire bond shear | WBS | C1 | – | – | – | – | – | Not applicable, not a wirebonded package |
| Wire bond pull strength | WBPS | C2 | – | – | – | – | – | Not applicable, not a wirebonded package |
| Solderability | S | C3 | – | – | – | – | – | Nota leadframe package |
| Physical dimensions | PD | C4 | – | Package outline drawing | 10 | 3 | 0F/30 | CPK≥ 1.67 |
| Solder ball shear | SBS | C5 | JESD22-B117 | Five balls each from a minimumof 10 devices, ≥500 g/ball for pad<br>                                opening 470 mm | 10 | 3 | 0F/30 | CPK ≥ 1.67 |
| Lead integrity | LI | C6 | – | – | – | – | – | Not a leadframe package |
| ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** | ***Test group D: die fabrication                                    reliability tests*** |
| Electromigration | EM | D1 | JP001A | – | – | – | – | PASS |
| Time-dependent dielectric breakdown | TDDB | D2 | JP001A | – | – | – | – | PASS |
| Hot carrier injection | HCI | D3 | JP001A | – | – | – | – | PASS |
| Negative bias temperature instability | NBTI | D4 | JP001A | – | – | – | – | PASS |
| Stress migration | SM | D5 | JP001A | – | – | – | – | PASS |
| ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** | ***Test group E: electrical                                    verification tests*** |
| Pre and post stress electrical test | TEST | E1 | – | – | – | – | – |  |
| ESD – human body model | HBM | E2 | AEC-Q100-002 | Pass target ± 1 kV with margin(pre and post ATE at R and H) | 3 | 1 | 0F/3 | Passing ESD HBM Level + 1500 V |
| ESD – charged device model | CDM | E3 | AEC-Q100-011 | Pass target ± 250 V (pre and post ATE at R and H) | 3 | 2 | 0F/6 | Passing ESD CDM Level ± 250 V |
| Latch-up | LU | E4 | AEC-Q100-004 | Ta = 85°C, Current injection ± 100 mA, over voltage test at 1.5x VDD<br>                                (pre and post ATE at R and H) | 6 | 1 | 0F/6 | – |
| Electrical distribution | ED | E5 | – | – | – | – | – | Performed |
| Fault grading | FG | E6 | – | – | – | – | – | Performed |
| Characterization | CHAR | E7 | – | – | – | – | – | Performed |
| Electromagnetic compatibility | EMC | E9 | – | – | – | – | – | Not performed. System level test |
| Short circuit characterization | SC | E10 | – | – | – | – | – | Not applicable. Not &gt;12V or a power device |
| Soft error rate | SER | E11 | – | – | – | – | – | Performed |
| ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** | ***Test group F: defect screening                                    tests*** |
| Process average test | PAT | F1 | – | – | – | – | – | Performed |
| Statistical bin/yield analysis | SBA | F2 | – | – | – | – | – | Performed |
|  |  |  |  |  |  |  |  |  |

## Device characteristics

Source: [https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73480-1/topic/part-reliability.html)

Table : Device characteristics

| **Device name** | QCS615 |
| --- | --- |
| **Package type** | FCBGA761+HS |
| **Package body size** | 23.0 × 23.0 × 2.45 mm |
| **Lead count** | 761 |
| **Lead composition** | SAC405/Ni |
| **Fab sites** | Samsung |
| **Assembly sites** | SPIL,Taiwan |
| **Solder ball pitch** | 0.8 mm |

Last Published: Mar 09, 2026

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