# Electrical specifications
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
This topic defines the device electrical performance specifications, including absolute
maximum ratings, operating conditions, and subsystem (such as memory and connectivity)
parameters, which are useful in deploying the device with optimal processing capabilities and
high efficiency.
## Absolute maximum ratings
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Do not exceed the absolute maximum ratings mentioned in [Table : Absolute maximum ratings](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#jbz1612763758912__table_u21_rls_qpb).
**WARNING:** If ratings are exceeded, this may cause permanent damage to the device.
Functionality and reliability are guaranteed only within the conditions described in [Operating conditions](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411).
| Parameter | Description | Min | Max | Unit |
| --- | --- | --- | --- | --- |
| **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** |
| VDD\_APC0 | Kryo Silver application processor | -0.3 | 1.0472 | V |
| VDD\_APC1 | Kryo Gold application processor | -0.3 | 1.2485 | V |
| VDD\_MODEM | Modem circuits | -0.3 | 1.0472 | V |
| VDD\_GFX | Graphics processor | -0.3 | 1.1299 | V |
| VDD\_PX1 | Pad group 1 - DDR pads | -0.3 | 1.287 | V |
| VDD\_PX2 | Pad group 2 - SDC2 pads | -0.3 | 3.8984 | V |
| VDD\_PX5 | Pad group 5 - UIM1 pads | -0.3 | 3.63 | V |
| VDD\_PX6 | Pad group 6 - UIM2 pads | -0.3 | 3.63 | V |
| VDD\_PX10 | Pad groups 10 - UFS pads | -0.3 | 1.4344 | V |
| VDD\_PX11 | Pad groups 11 - CXO pads | -0.3 | 1.4344 | V |
| VDD\_MX | On-chip memory | -0.3 | 1.0472 | V |
| VDD\_LPI\_CX | LPI core | -0.3 | 1.0428 | V |
| VDD\_A\_USBSSDP\_0\_CORE | USB SS 0.9 V circuit | -0.3 | 1.0175 | V |
| VDD\_IO\_EBIx | EBI I/O circuit | -0.3 | 0.715 | V |
| VDD\_A\_QREFS\_1P25 | Reference voltage for QREFS 1.25 V circuit | -0.3 | 1.512 | V |
| VDD\_A\_USBHS\_3P1 | USB HS 3.1 V circuit | -0.3 | 3.8984 | V |
| VDD\_A\_CXO\_1P8 | 1.8 V for clock circuits | -0.3 | 2.178 | V |
| VDDPX\_VBIAS\_SDC | Bias voltage for SDC and UIM circuits | -0.3 | 1.512 | V |
| VDDPX\_VBIAS\_UIM | Bias voltage for SDC and UIM circuits | -0.3 | 1.512 | V |
| VDD\_PX0 | Pad group 3 - control signal pads | -0.3 | 2.2 | V |
| VDD\_PX3 | Pad group 3 - I/O pads | -0.3 | 2.2 | V |
| VDD\_PX7 | Pad group 7 - SDC1 pads | -0.3 | 2.2 | V |
| VDD\_CX | Digital core circuits | -0.3 | 1.129 | V |
| VDD\_WPSS\_CX | WPSS circuit | -0.3 | 1.129 | V |
| VDD\_D\_EBIx | EBI digital circuits | -0.3 | 1.129 | V |
| VDD\_A\_PCIE\_0\_1P2 | PCIe circuit | -0.3 | 1.386 | V |
| VDD\_A\_PCIE\_1\_1P2 | PCIe circuit | -0.3 | 1.386 | V |
| VDD\_A\_EDP\_1P2 | eDP circuits | -0.3 | 1.386 | V |
| VDD\_VREF\_1P2 | PCIe circuit QLink1 circuit | -0.3 | 1.386 | V |
| VDD\_A\_CSI\_x\_1P2 | CSI 1.2 V circuits | -0.3 | 1.386 | V |
| VDD\_A\_UFS\_0\_1P2 | UFS 1.2 V circuits | -0.3 | 1.386 | V |
| VDD\_A\_USBSSDP\_0\_1P2 | USB SS 1.2 V circuits | -0.3 | 1.386 | V |
| VDD\_A\_QLINK\_0\_1P2\_CK | QLink 0 clock circuit | -0.3 | 1.386 | V |
| VDD\_A\_QLINK\_1\_1P2 | QLink 1 clock circuit | -0.3 | 1.386 | V |
| VDD\_A\_DSI\_0\_1P2 | DSI 1.2 V circuit | -0.3 | 1.386 | V |
| VDD\_A\_PCIE\_0\_CORE | PCIe circuit | -0.3 | 1.155 | V |
| VDD\_A\_PCIE\_1\_CORE | PCIe circuit | -0.3 | 1.155 | V |
| VDD\_A\_EDP\_0P9 | eDP circuits | -0.3 | 1.155 | V |
| VDD\_VREF\_0P9 | PCIe reference voltage | -0.3 | 1.155 | V |
| VDD\_A\_CSI\_x\_0P9 | CSIX 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_QLINK\_x\_0P9 | QLink 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_QLINK\_x\_0P9\_CK | QLink clock circuits | -0.3 | 1.155 | V |
| VDD\_A\_UFS\_0\_CORE | UFS 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_USBHS\_CORE | USB HS 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_GNSS\_0P9 | GNSS circuits | -0.3 | 1.155 | V |
| VDD\_A\_DSI\_0\_0P9 | DSI 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_DSI\_0\_PLL\_0P9 | DSI PLL 0.9 V circuits | -0.3 | 1.155 | V |
| VDD\_A\_QREFS\_0P875 | Reference voltage for QREFS 0.875 V circuit | -0.3 | 1.155 | V |
| VDD\_A\_EBIx | EBI PHY voltage circuits | -0.3 | 1.115 | V |
| VDD\_A\_PLL\_EBIx | EBI PLL circuit | -0.3 | 1.115 | V |
| VDD\_A\_USBHS\_1P8 | USB HS 1.8 V circuits | -0.3 | 2.178 | V |
| VDD\_QFPROM | Programming the QFPROM | -0.3 | 2.178 | V |
| VDD\_A\_GFX\_CS\_1P8 | GFX 1.8 V circuits | -0.3 | 2.178 | V |
| VDD\_A\_TURNING\_Q6\_CS\_1P8 | Power for Q6 current sensor 1.8 V circuits | -0.3 | 2.178 | V |
| VDD\_A\_QREFS\_1P8 | Reference voltage for the QREFS 1.8 V circuits | -0.3 | 2.178 | V |
| VDD\_A\_APC\_CS\_1P8 | Power for application processor current sensor; 1.8 V circuits | -0.3 | 2.178 | V |
| VDD\_LPI\_NAV\_MX | LPI on chip memory – NAV | -0.3 | 1.0043 | V |
| VDD\_LPI\_MX | Low-power island memory circuits | -0.3 | 1.0043 | V |
| Ts | Storage temperature[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_absolute-maximum-ratings), [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_2_absolute-maximum-ratings) | -55 | 150 | °C |
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[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_absolute-maximum-ratings) The storage temperature range applies when the device is
in the OFF state (the device is not assembled in any platform and is not
electrically connected to any voltage or I/O signals). Damage may occur when the
device is subjected to this temperature for any length of time.
[^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_2_absolute-maximum-ratings) For
devices shipped in tape and reel, the storage temperature range is [+15°C~+35°C] and
< 90% relative humidity (RH). QTI recommends allowing the device to return to
ambient room temperature before usage.
## Operating conditions
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Operating conditions include parameters such as power supply voltage, power distribution
impedances, and thermal conditions. The QCS6490 and QCS5430 chipsets meet all
performance specifications listed in the following table when used within the operating
conditions.
Note: Keep the thermal mitigation algorithm enabled with default limits to ensure
that the operating temperature range is kept within the specification.
| Parameter | Parameter | Parameter | Min | Type[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_operating-conditions) | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** | **Power supply voltages** |
| VDD\_APC0 [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411__fn_vhf_15v_qgc) | – | Kryo Silver application processor | 0.47 | – | 0.952 | V |
| VDD\_APC1 [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411__fn_vhf_15v_qgc) | – | Kryo Gold application processor | 0.484 | – | 1.135 | V |
| VDD\_MODEM | – | Modem circuits | 0.47 | – | 0.952 | V |
| VDD\_GFX [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411__fn_vhf_15v_qgc) | – | Graphics processor | 0.47 | – | 1.027 | V |
| VDD\_PX1 (LPDDR5) | – | Pad group 1 - DDR pads | 1.01 | 1.05 | 1.12 | V |
| VDD\_PX1 (LPDDR4X) | – | Pad group 1 - DDR pads | 1.06 | 1.1 | 1.17 | V |
| VDD\_PX2 | Low voltage | Pad group 2 - SDC2 pads | 1.65 | 1.8 | 1.9 | V |
| VDD\_PX2 | High voltage | Pad group 2 - SDC2 pads | 2.72 | 2.95 | 3.544 | V |
| VDD\_PX5 [^3^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_3_operating-conditions) | Low voltage | Pad group 5 - UIM1 pads | 1.62 | 1.8 | 1.9 | V |
| VDD\_PX5 [^3^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_3_operating-conditions) | High voltage | Pad group 5 - UIM1 pads | 2.85 | 2.96 | 3.3 | V |
| VDD\_PX6 | Low voltage | Pad group 6 - UIM2 pads | 1.62 | 1.8 | 1.9 | V |
| VDD\_PX6 | High voltage | Pad group 6 - UIM2 pads | 2.85 | 2.96 | 3.3 | V |
| VDD\_PX10 | – | Pad groups 10-UFS pads | 1.1 | 1.2 | 1.304 | V |
| VDD\_PX11 | – | Pad groups 11-CXO pads | 1.1 | 1.2 | 1.304 | V |
| VDD\_MX [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411__fn_vhf_15v_qgc) | Active | On-chip memory | 0.695 | – | 0.952 | V |
| VDD\_MX [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#rkh1612768256411__fn_vhf_15v_qgc) | Retention | On-chip memory | 0.512 | – | 0.668 | V |
| VDD\_LPI\_CX | – | LPI core | 0.47 | – | 0.948 | V |
| VDD\_A\_USBSSDP\_0\_CORE | – | USB SS 0.9 V circuit | 0.825 | 0.875 | 0.925 | V |
| VDD\_IO\_EBIx (LPDDR5) | > 1.5 GHz | EBI I/O circuit | 0.47 | 0.5 | 0.57 | V |
| VDD\_IO\_EBIx (LPDDR5) | < 1.5 GHz | EBI I/O circuit | 0.27 | 0.3 | 0.37 | V |
| VDD\_IO\_EBIx (LPDDR4X) | – | EBI I/O circuit | 0.57 | 0.6 | 0.65 | V |
| VDD\_A\_QREFS\_1P25 | – | Reference voltage for QREFS 1.25 V circuit | 1.125 | 1.25 | 1.375 | V |
| VDD\_A\_USBHS\_3P1 [^4^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_4_operating-conditions) | – | USB HS 3.1 V circuit | 2.7 | 3.072 | 3.544 | V |
| VDD\_A\_CXO\_1P8 | – | 1.8 V for clock circuits | 1.68 | 1.8 | 1.98 | V |
| VDDPX\_VBIAS\_SDC | – | Bias voltage for SDC and UIM circuits | 1.125 | 1.25 | 1.375 | V |
| VDDPX\_VBIAS\_UIM | – | Bias voltage for SDC and UIM circuits | 1.125 | 1.25 | 1.375 | V |
| VDD\_PX0 | – | Pad group 3 - control signal pads | 1.68 | 1.8 | 2 | V |
| VDD\_PX3 | – | Pad group 3 - I/O pads | 1.68 | 1.8 | 2 | V |
| VDD\_PX7 | – | Pad group 7- SDC1 pads | 1.68 | 1.8 | 2 | V |
| VDD\_CX | Active | Digital core circuits | 0.47 | – | 1.027 | V |
| VDD\_CX | Retention | Digital core circuits | 0.352 | – | 0.48 | V |
| VDD\_WPSS\_CX | – | WPSS circuit | 0.47 | – | 1.027 | V |
| VDD\_D\_EBIx | – | EBI digital circuits | 0.47 | – | 1.027 | V |
| VDD\_A\_PCIE\_0\_1P2 | – | PCIe circuit | 1.11 | 1.2 | 1.26 | V |
| VDD\_VREF\_1P2 | – | PCIe circuit QLink1 circuit | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_CSI\_x\_1P2 | – | CSI 1.2 V circuits | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_UFS\_0\_1P2 | – | UFS 1.2 V circuits | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_USBSSDP\_0\_1P2 | – | USB SS 1.2 V circuits | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_QLINK\_0\_1P2\_CK | – | QLink0 clock circuit | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_QLINK\_1\_1P2 | – | QLink1 clock circuit | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_DSI\_0\_1P2 | – | DSI 1.2 V circuit | 1.11 | 1.2 | 1.26 | V |
| VDD\_A\_PCIE\_0\_CORE | – | PCIe circuit | 0.86 | 0.875 | 1.05 | V |
| VDD\_VREF\_0P9 | – | PCIe reference voltage | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_CSI\_x\_0P9 | – | CSIX 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_QLINK\_x\_0P9 | – | QLink 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_QLINK\_x\_0P9\_CK | – | QLink clock circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_UFS\_0\_CORE | – | UFS 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_USBHS\_CORE | – | USB HS 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_GNSS\_0P9 | – | GNSS circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_DSI\_0\_0P9 | – | DSI 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_DSI\_0\_PLL\_0P9 | – | DSI PLL 0.9 V circuits | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_QREFS\_0P875 | – | Reference voltage for QREFS 0.875 V circuit | 0.86 | 0.875 | 1.05 | V |
| VDD\_A\_EBIx | – | EBI PHY voltage circuits | 0.64 | – | 1.014 | V |
| VDD\_A\_PLL\_EBIx | – | EBI PLL circuit | 0.64 | – | 1.014 | V |
| VDD\_A\_USBHS\_1P8 | – | USB HS 1.8 V circuits | 1.68 | 1.8 | 1.98 | V |
| VDD\_QFPROM | – | Programming the QFPROM | 1.68 | 1.8 | 1.98 | V |
| VDD\_A\_GFX\_CS\_1P8 | – | GFX 1.8 V circuits | 1.68 | 1.8 | 1.98 | V |
| VDD\_A\_TURNING\_Q6\_CS\_1P8 | – | Power for Q6 current sensor 1.8 V circuits | 1.68 | 1.8 | 1.98 | V |
| VDD\_A\_QREFS\_1P8 | – | Reference voltage for the QREFS 1.8 V circuits | 1.68 | 1.8 | 1.98 | V |
| VDD\_A\_APC\_CS\_1P8 | – | Power for application processor current sensor; 1.8 V
circuits | 1.68 | 1.8 | 1.98 | V |
| VDD\_LPI\_NAV\_MX | – | LPI on chip memory – NAV | 0.695 | – | 0.913 | V |
| VDD\_LPI\_MX | – | Low-power island memory circuits | 0.695 | – | 0.913 | V |
| **Thermal conditions** | **Thermal conditions** | **Thermal conditions** | **Thermal conditions** | **Thermal conditions** | **Thermal conditions** | **Thermal conditions** |
| T | – | Device operating temperature | Tambient = -30 | – | Tjunction = 95 | °C |
| T [^5^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_5_operating-conditions) | – | Device operating temperature | Tambient = -30 | – | Tjunction = 105 | °C |
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[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_operating-conditions) Typical voltages represent the recommended output settings of the
companion PMIC device.
^2^ All voltage rails are optimized and dynamically
controlled by software based on system requirements and margins. During boot-up
stage, some power rails, for example, VDD\_GFX, VDD\_APC, VDD\_MX might margin close to
operation but within absolution maximum. Internal validation has been performed
under these conditions.
[^3^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_3_operating-conditions) Universal Identity Module (UIM) is not supported on the
QCS6490 and QCS5430 chipsets. For more information on supported pins,
see [QCM6490/QCS6490+ PM7325 + PM7350C + PM7250B-2
Reference Schematic (80-20659-44)](https://docs.qualcomm.com/bundle/80-20659-44/resource/80-20659-44.pdf) and [QCS6490/QCS5430 Technical Reference
Manual (80-20659-5)](https://docs.qualcomm.com/bundle/80-20659-5/resource/80-20659-5.pdf).
[^4^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_4_operating-conditions) Software configures L2B VDD\_A\_USBHS\_3P1 to vote 2.704 V. At
boot/power-on L7B starts at 2.952 V. Once UFS is enumerated at XBL, software changes
this voltage to 2.5 V (for UFS3.1).
[^5^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_5_operating-conditions) This thermal condition is applicable only for the 300-AA variant of
QCS6490 and QCS5430.
Note: Unless otherwise specified, the specifications apply across the
device's operating temperature range.
## Power delivery network specification
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
For power delivery network specification, see [QCS6490/QCS5430 Chipset Power Delivery Network Specification
(80-20659-1P)](https://docs.qualcomm.com/bundle/80-20659-1P/resource/80-20659-1P.pdf).
## Average operating current
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
For current consumption information and details on operating modes tested, see [QCM6490/QCS6490 Linux Android Current Consumption Data Application
Note (80-20659-7)](https://docs.qualcomm.com/bundle/80-20659-7/resource/80-20659-7.pdf).
## Dhrystone maximum power
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The Dhrystone maximum power (tested at 1× Kryo Prime at 2.4 GHz, 3 × Kryo Gold at 2.4 GHz,
and 4 × Kryo Silver at 1.8 GHz) at 95°C (Tj) is 6.9 W. QTI recommends measuring the Dhrystone
power on the VDD\_APC1 rail, right before PDN capacitors with a small serial sampling resistor
inserted, if necessary. The measurement sampling rate is > 1.25 Msps (or < 0.8 μs), and
the average window is > 1 ms (or > 1250 samples).
Note: The
Dhrystone specification applies to QCS6490 and QCS5430 commercial sample (CS)
devices only.
## Power sequencing
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The PMIC includes power-on circuits that provide the correct power sequencing for the
QCS6490 and QCS5430 chipsets. The supplies are turned on as groups of
regulators controlled by the hardware configuration of certain PMIC pins. For more
information, see [PM7325 Data Sheet (80-19730-1)](https://docs.qualcomm.com/bundle/80-19730-1/resource/80-19730-1.pdf) and [PM7350C Data Sheet (80-PW237-1)](https://docs.qualcomm.com/bundle/80-PW237-1/resource/80-PW237-1.pdf).
A high-level summary of the required default power-on sequence is as follows:
| Sequence | Power domain |
| :---: | --- |
| 1 | VDD\_PX5 (UICC1), VDD\_PX6 (UICC2), |
| 2 | VDD\_MX (on-chip memory) |
| 3 | VDD\_LPI\_MX (LPI core memory), VDD\_NAV\_LPI\_MX |
| 4 | VDD\_A\_EBI\_0P9 (EBI 0.9 V), VDD\_A\_PLL\_EBI\_0P9 |
| 5 | VDD\_CX (digital core), VDD\_D\_EBI, VDD\_WPSS\_CX (WPSS core supply) |
| 6 | VDD\_LPI\_CX (LPI core) |
| 7 | VDD\_PX0 (pad group0), VDD\_PX3 (peripheral), VDD\_PX7 (eMMC pads) |
| 8 | VDD\_PX1 (pad group1) |
| 9 | VDD\_A\_DSI\_1P2 (DSI 1.2 V), VDD\_A\_PCIe\_0\_PLL\_1P2, VDD\_A\_USB\_SS\_DP\_1P2,
VDD\_A\_UFS\_0\_1P, VDD\_A\_QLINK\_1P2\_CK (QLINK 1.2 V), VDD\_A\_CSI\_X\_1P2 (CSI 1.2 V) |
| 10 | VDD\_A\_QREFS\_1P25 (reference voltage for the QREFS 1.25 V circuit),
VDDPX\_VBIAS\_SDC (reference voltage for SDC), VDDPX\_VBIAS\_UIM (reference voltage for
UIM) |
| 11 | VDD\_A\_DSI\_PLL\_0P9 (DSI 0.9 V PLL), VDD\_A\_UFS\_0\_CORE (UFS), VDD\_A\_CSI\_X\_0P9 (CSI
0.9 V), VDD\_A\_DSI\_0P9 (DSI 0.9 V), VDD\_USBHS\_CORE (USB HS), VDD\_A\_QREFS\_0P875
(reference voltage for the QREFS 0.875 V), VDD\_A\_QLINK0\_0P9 (QLink0), VDD\_A\_QLINK1\_0P9 (QLink1), VDD\_A\_GNSS\_0P9, VDD\_A\_PCIe0\_CORE,
VDD\_A\_QLINK0\_CK\_0P9 (QLink0 clock), VDD\_A\_QLINK1\_CK\_0P9 (QLink1
clock), |
| 12 | VDD\_A\_USB\_SS\_DP\_CORE (USB Core) |
| 13 | VDD\_PX11 (CXO pad group) |
| 14 | VDD\_A\_QREFS\_VREF\_1P8, VDD\_A\_APC\_CS\_1P8, VDD\_A\_USB\_HS\_1P8, VDD\_A\_GFX\_CS\_1P8,
VDD\_A\_QFPROM, VDD\_A\_TURNING\_CS\_1P8, VDD\_A\_CXO\_1P8 |
| 15 | VDD\_IO\_EBI (EBI I/O supply) |
| 16 | VDD\_A\_USB\_HS\_3P1 (USB HS 3.1 V) |
| 17 | VDD\_PX10 (UFS reference clock, UFS reset ) |
| 18 | VDD\_PX2 (SDC2 pads) |
| 19 | VDD\_APC0 (Silver application processor) |
This sequence includes:
- After completing the sequence, the software can power-on other appropriate power
supply.
- Before the next domain starts increasing, each domain must achieve its 90% value.
## Digital-logic characteristics
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The digital I/O performance specification depends on pad type, usage, supply voltage, or a
combination of pad type, usage, and supply voltage.
- Some of the I/Os are dedicated for interconnections between the SoC device and other ICs
within the QTI chipset; therefore, specifications are not required.
- Some of the I/Os conform to existing standards, such as I²C and SPI. QTI devices comply
with those standards; therefore, additional specifications are not required.
- All other digital I/Os require performance specifications.
Note: Unless otherwise specified, all device characterizations are carried
out across the specified operating temperature and voltage ranges.
Table : DC specification of 1.8 V GPIOs and WCSS WSI I/Os
| Parameter | Description | Min | Max | Unit |
| :---: | --- | :---: | :---: | :---: |
| VIH | High-level input voltage, CMOS/Schmitt (HIHYS\_EN = low) | 0.65 × VDD\_PX3 | VDD\_PX3 + 0.3 V | V |
| VIL | Low-level input voltage, CMOS/Schmitt (HIHYS\_EN = low) | -0.3 V | 0.35 × VDD\_PX3 | V |
| VIH | High-level input voltage, CMOS/Schmitt (HIHYS\_EN = high) | 0.7 × VDD\_PX3 | VDD\_PX3 + 0.3 V | V |
| VIL | Low-level input voltage, CMOS/Schmitt (HIHYS\_EN = high) | -0.3 V | 0.3 × VDD\_PX3 | V |
| VHYS | Schmitt hysteresis voltage (HIHYS\_EN= low) | 100 | — | mV |
| VHYS | Schmitt hysteresis voltage (HIHYS\_EN = high) | 300 | — | mV |
| IIH | Input high leakage current | — | 1.0 | µA |
| IIL | Input low leakage current | -1.0 | — | µA |
| IIHPD | Input high leakage current with pull-down | 27.5
(60) | 97.5
(20) | µA
(kΩ) |
| IILPU | Input low leakage current with pull-up | -97.5
(20) | -27.5
(60) | µA
(kΩ) |
| VOH | High-level output voltage, CMOS [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_fdf_kk5_vfc) | VDD\_PX3 - 0.45 | VDD\_PX3 | V |
| VOL | Low-level output voltage, CMOS [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_fdf_kk5_vfc) | 0.0 | 0.45 | V |
^1^ VOL and VOH are measured at IOL and IOH respectively, with
16 mA current across min and max voltages and operating temperatures. For more
information regarding possible drive strength settings, see [Table : Possible drive strength](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__table_qjc_yj5_vfc)
Table : Possible drive strength
| BIT configuration | Drive strength (mA) |
| :---: | :---: |
| 000 | 2 |
| 001 | 4 |
| 010 | 6 |
| 011 | 8 |
| 100 | 10 |
| 101 | 12 |
| 110 | 14 |
| 111 | 16 |
Table : SDC 3 V mode DC specifications
| Parameter | Description | Min | Typ | Max | Unit |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 0.625 × VDD\_PX2 | – | VDD\_PX2 + 0.3 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.25 × VDD\_PX2 | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | – | – | 10 | µA |
| IIL | Input low leakage current | -10 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_zft_j51_yfc) | 0.75 × VDD\_PX2 | – | VDD\_PX2 | V |
| VOL | Low-level output voltage [^2^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_zft_j51_yfc) | 0.0 | – | 0.125 × VDD\_PX2 | V |
^2^ VOL and VOH are measured at IOL and IOH respectively, with
16 mA current across min and max voltages and operating temperatures. For more
information regarding possible drive strength settings, see [Table : Possible drive strength](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__table_emt_k51_yfc)
Table : Possible drive strength
| BIT configuration | Drive strength (mA) |
| :---: | :---: |
| 000 | 2 |
| 001 | 4 |
| 010 | 6 |
| 011 | 8 |
| 100 | 10 |
| 101 | 12 |
| 110 | 14 |
| 111 | 16 |
Table : SDC 1.8 V mode DC specifications
| Parameter | Description | Min | Typ | Max | Unit |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 1.27 | – | 2 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.58 | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | – | – | 5 | µA |
| IIL | Input low leakage current | -5 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage [^3^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_uq2_cy1_yfc) | 1.4 | – | – | V |
| VOL | Low-level output voltage [^3^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_uq2_cy1_yfc) | – | – | 0.45 | V |
^3^ VOL and VOH are measured at IOL and IOH respectively, with
16 mA current across min and max voltages and operating temperatures. For more
information regarding possible drive strength settings, see [Table : Possible drive strength](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__table_a31_zx1_yfc)
Table : Possible drive strength
| BIT configuration | Drive strength (mA) |
| :---: | :---: |
| 000 | 2 |
| 001 | 4 |
| 010 | 6 |
| 011 | 8 |
| 100 | 10 |
| 101 | 12 |
| 110 | 14 |
| 111 | 16 |
Table : UICC 3 V mode DC specifications for (VDD_PX5 and VDD_PX6)
| Parameter | Description | Min | Typ | Max | Unit |
| :---: | --- | :---: | :---: | :---: | :---: |
| VDDPX | Supply voltage | 2.7 | 2.95 | 3.05 | V |
| VIH | High-level input voltage [^4^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_4_digital-logic-characteristics) | 0.7 × VDDPX | – | VDDPX + 0.3 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.2 × VDDPX | V |
| VHYS | Schmitt hysteresis voltage [^5^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_5_digital-logic-characteristics) | 100 | – | – | mV |
| IIH | Input high leakage current | -20 | – | 20 | µA |
| IIL | Input low leakage current | – | – | 1000 | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage [^6^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_6_digital-logic-characteristics) | 0.8 × VDDPX | – | VDDPX | V |
| VOL | Low-level output voltage [^7^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_7_digital-logic-characteristics) | 0.0 | – | 0.4 | V |
[^4^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_4_digital-logic-characteristics) VIH and VIL are only
applicable for the I/O signal. VHYS is not a required specification for
UICC.
[^5^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_5_digital-logic-characteristics) VHYS is not a required specification
for UICC.
[^6^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_6_digital-logic-characteristics) UICC specifies VOH = 0.8 × VDDPX (RST)
and 0.7 × VDDPX (clock, I/O). The worse-case VOH is used in this table.
VOL and VOH are measured at IOL and IOH respectively, with 16 mA current across min
and max voltages and operating temperatures.
[^7^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_7_digital-logic-characteristics) UICC specifies VOL = 0.2 × VDDPX (RST,
clock) and 0.4 V (I/O). The worse-case VOL is used in this table. VOL and
VOH are measured at IOL and IOH respectively, with 16 mA current across min and max
voltages and operating temperatures. For more information regarding possible drive
strength settings, see [Table : Possible drive strength](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__table_c4g_4y1_yfc)
Table : Possible drive strength
| BIT configuration | Drive strength (mA) |
| :---: | :---: |
| 000 | 2 |
| 001 | 4 |
| 010 | 6 |
| 011 | 8 |
| 100 | 10 |
| 101 | 12 |
| 110 | 14 |
| 111 | 16 |
Table : UICC 1.8 V mode DC specifications for (VDD_PX5 and VDD_PX6)
| Parameter | Description | Min | Typ | Max | Unit |
| :---: | --- | :---: | :---: | :---: | :---: |
| VDDPX | Supply voltage [^8^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_8_digital-logic-characteristics) | 1.65 | 1.8 | 1.95 | V |
| VIH | High-level input voltage [^9^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_9_digital-logic-characteristics) | 0.7 × VDDPX | – | VDDPX + 0.3 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.2 × VDDPX | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | -20 | – | 20 | µA |
| IIL | Input low leakage current | – | – | 1000 | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage [^10^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_lj5_tz1_yfc) | 0.8 × VDDPX | – | VDDPX | V |
| VOL | Low-level output voltage [^10^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__fn_lj5_tz1_yfc) | 0.0 | – | 0.4 | V |
[^8^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_8_digital-logic-characteristics) The UICC supply range for class C is 1.62 V 1.98 V.
[^9^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_9_digital-logic-characteristics) VIH, VIL, are only applicable
for I/O signal. VHYS is not a required specification for UICC.
^10^ VOL and VOH are measured at IOL and IOH respectively, with
16 mA current across min and max voltages and operating temperatures. For more
information regarding possible drive strength settings, see [Table : Possible drive strength](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603__table_grn_qz1_yfc)
Table : Possible drive strength
| BIT configuration | Drive strength (mA) |
| :---: | :---: |
| 000 | 2 |
| 001 | 4 |
| 010 | 6 |
| 011 | 8 |
| 100 | 10 |
| 101 | 12 |
| 110 | 14 |
| 111 | 16 |
Table : Digital I/O characteristics for VDD_PX10 nominal (UFS)
| Parameter | Description | Min | Max | Unit |
| :---: | --- | :---: | :---: | :---: |
| VOL | Output low-level voltage | 0 | 0.25 × VDD\_PX10 | V |
| VOH | Output high-level voltage | 0.75 × VDD\_PX10 | VDD\_PX10 | V |
| RPULL-UP | Pull-up resistance | 20 | – | kΩ |
| RPULL-DOWN | Pull-down resistance | 20 | – | kΩ |
## Timing characteristics
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Specifications for the device timing characteristics are included (where appropriate) under
each function along with all its other performance specifications. Some general comments about
timing characteristics and pertinent pad design methodologies are included here.
Note:
QCS6490 and QCS5430 devices are characterized with actively terminated loads,
so all baseband timing parameters assume no bus loading. For more information, see [Rise and fall time specifications](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#kfb1612783228904).
### Timing diagram conventions
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the conventions used within timing diagrams throughout this
document.
Figure : Timing diagram conventions
For each signal in the diagram:
- One clock period (T) extends from one rising clock edge to the next rising clock edge.
- The high level represents 1, the low level represents 0, and the middle level represents
the floating (high impedance) state.
- When both the high and low levels are shown over the same time interval, the meaning depends on the signal type:
- For a bus type signal (multiple bits), the processor or external interface is driving a value, but that value may or may not be valid.
- For a single signal, it indicates *don’t care*.
### Rise and fall time specifications
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
QCS6490 and QCS5430 chipsets characterization testing uses actively terminated
loads, making the rise and fall times quicker (mimicking a no-load condition). The impact of
different external load conditions on rise and fall times is shown in the following
figure.
Figure : Rise and fall times under different load conditions
To account for external load conditions, add the rise or fall times to the parameters that
start timing at the QCS6490 and QCS5430 chipsets and terminate at an external
device (or vice versa). Adding these rise and fall times is equivalent to applying capacitive
load derating factors.
### Pad design methodology
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430 chipsets use a generic CMOS pad driver design. The pad
design creates a pin response and behavior that is symmetric, regarding the associated
VDD_PXDD_PX/2% or 50% of Vsupply. The input switchpoint for pure
input-only pads is a VDD_PX supply. The documented switchpoints (guaranteed over
worst-case combinations of process, voltage, and temperature by both design and
characterization) are 35% of VDD_PX for VIL and 65% of VDD_PX
for VIH.
Figure : Digital input-signal switchpoints
Outputs (such as addresses, chip selects, and clocks) are designed and characterized to
source or sink a large DC output current (several mA) at the documented VOH (min) and VOL(max)
levels over worst-case process/voltage/temperature. The pad output structures are essentially
CMOS drivers. They may have a small amount of IR loss (estimated at <50 mV under worst-case
conditions), the expected zero DC load outputs are estimated to be:
- VOH~ VDDPX- 50 mV or more
- VOL~ 50 mV or less
Figure : Output pad equivalent circuit
The output pads are essentially CMOS outputs with a corresponding FET-type output voltage/current transfer function. When an output pad is shorted to the opposite power rail, the pad is capable of sourcing or sinking ISC (SC = short-circuit) of current, where the magnitude of ISC is larger than the current capability at the intended output logic levels.
The DC output drive strength can be approximated by linear interpolations between
VOH (min) and VDDPX - 50 mV, and between VOL (max) and
50 mV. For example, an output pad driving low that guarantees 4.5 mA at VOL (max)
provides approximately 3.0 mA or more at 2/3 × [VOL (max) - 50 mV], and 1.5 mA or
more at 1/3 × [VOL (max) - 50 mV]. Likewise, an output pad driving high that
guarantees 2.5 mA at VOH (min) provides approximately 1.25 mA or more at ½ ×
[VDDPX - 50 mV + VOH (min)].
The target application includes a radio, output pads are designed to minimize output slew
rates. Decreased slew rates limit high-frequency spectral components that tend to desensitize
the companion radio.
## Memory support
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
All timing parameters in this document assume no bus loading. Rise/fall time numbers must
factor into the numbers in this document. For example, setup time numbers get worse, and hold
time numbers may improve.
### EBI0 and EBI1 memory support
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The EBI0 and EBI1 ports are dedicated to the non-PoP LPDDR4X/LPDDR5 SDRAM memory that is
attached to the QCS6490 and QCS5430 chipsets.
### eMMC on SDC1
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
eMMC NAND flash supports the SDC1 port. For more information, see [Secured digital interfaces](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#won1612791672430).
## Multimedia
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
This topic addresses the performance specification of multimedia parameters.
### Camera interfaces
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430 chipsets support five 4-lane MIPI-CSI: CSI0, CSI1, CSI2,
CSI3, and CSI4.
Table : Supported MIPI-CSI standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MIPI Alliance Specification for D-PHY v1.2* | Supports only unidirectional data receiving |
| *MIPI Alliance Specification for C-PHY v1.0* | None |
### Audio support
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
A dedicated audio codec, such as the WCD9370/WCD9375/WCD9380/WCD9385, uses the industry
standard SoundWire interface.
Other audio-related interface options include:
- Digital microphone: [Digital microphone PDM interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#mhz1612792085502)
- SWR: [SoundWire (SWR) interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#ixa1612792117268)
- SLIMbus: [SLIMbus interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fhj1612792152597)
- I²S: [I²S interfaces](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#qnl1612792195661)
- I²C/I3C: [I²C/I3C interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#arb1612792921091)
- SPI: [Serial peripheral interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#pzl1612792942013)
For more information on performance characteristics, see [Qualcomm Aqstic™ WCD9370 Device Specification
(80-PG244-1)](https://docs.qualcomm.com/bundle/80-PG244-1/resource/80-PG244-1.pdf), [Qualcomm Aqstic WCD9375 Device Specification
(80-PG245-1)](https://docs.qualcomm.com/bundle/80-PG245-1/resource/80-PG245-1.pdf), and [Qualcomm Aqstic WCD9380/WCD9385 Device Specification
(80-PL335-1)](https://docs.qualcomm.com/bundle/80-PL335-1/resource/80-PL335-1.pdf).
### Display support
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430 chipsets support one D-PHY display.
Table : Supported MIPI-DSI standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MIPI Alliance Specification for Display Serial Interface* | None |
| *MIPI Alliance Specification for D-PHY v1.2* | None |
| *MIPI Alliance Specification for C-PHY v1.0* | None |
### Digital media broadcast (DMB) support
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430chipsets support an external DMB solution using the following
interface options:
- SPI: [Serial peripheral interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#pzl1612792942013)
- SD: [Secured digital interfaces](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#won1612791672430)
## Connectivity
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The connectivity functions that require electrical specifications for this chipset are as
follows:
- SD, including SD cards and multimedia cards (MMC)
- USB host/slave support with built-in physical layer (PHY)
- Universal integrated circuit card (UICC) interface
- DisplayPort support over USB Type-C
- Serial low-power interchip media bus (SLIMbus) interface for Bluetooth, FM
- Inter-IC sound (I²S) interfaces
- Touchscreen connections
- Dedicated I²C interfaces for camera (CCI I²C)
- Through proper configuration of QUP ports:
- Universal asynchronous receiver/transmitter (UART) ports
- Inter-integrated circuit (I²C) interfaces
- Serial peripheral interface (SPI) ports
The pertinent specifications for these functions are detailed in the following topics.
Note: In addition to the following hardware specifications, see the latest software release notes for software-based performance features or limitations.
### Secured digital interfaces
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported secure digital (SD) interface standards and their exceptions are listed
here.
Table : Supported SD standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MultiMediaCard Host Specification version 5.1* | None |
| *Secure Digital: Physical Layer Specification version 3.0* | None |
| *SDIO Card Specification version 3.0* | None |
Figure : Secured digital interface timing
| SDCC modes | Frequency | Parameter | Description | Min (ns) | Max (ns) |
| --- | --- | --- | --- | --- | --- |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | TclkH | Clock high time | 2.25 | 2.75 |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | Tcidv | Command input valid window | N/A | 2.4 |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | Tcodly | Command output delay | -1.45 | 0.85 |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | tRQ | DQS to DQ valid setup | 0.4 | N/A |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | tRQH | DQS to DQ valid hold | N/A | -0.4 |
| HS400 (DDR 200 MHz) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_secured-digital-interfaces) | 200 MHz | Tdodly | Data output delay | 0.4 | 1.85 |
| HS200(SDR 200 MHz) | 200 MHz | TclkH | Clock high time | 2.25 | 2.75 |
| HS200(SDR 200 MHz) | 200 MHz | Tcidv | Command input valid window | N/A | 2.4 |
| HS200(SDR 200 MHz) | 200 MHz | Tcodly | Command output delay | -1.45 | 0.85 |
| HS200(SDR 200 MHz) | 200 MHz | Tidv | Data input valid window | N/A | 2.4 |
| HS200(SDR 200 MHz) | 200 MHz | Tdodly | Data output delay | -1.45 | 0.85 |
| DDR52 | 52 MHz | TclkH | Clock high time | 8.65 | 10.57 |
| DDR52 | 52 MHz | Tcisu | Command input setup | N/A | 5.53 |
| DDR52 | 52 MHz | Tcih | Command input hold | N/A | 1.50 |
| DDR52 | 52 MHz | Tcodly | Command output delay | -7.85 | 2.65 |
| DDR52 | 52 MHz | Tisu | Data input setup | N/A | 1.65 |
| DDR52 | 52 MHz | Tih | Data input hold | N/A | 1.50 |
| DDR52 | 52 MHz | Tdodly | Data output delay | 2.50 | 6.15 |
| SDR 104 | 202 MHz | TclkH | Clock high time | 1.5 | 3.5 |
| SDR 104 | 202 MHz | Tcidv | Command input valid window | N/A | 2.4 |
| SDR 104 | 202 MHz | Tcodly | Command output delay | -1.45 | 0.85 |
| SDR 104 | 202 MHz | Tidv | Data input valid window | N/A | 2.4 |
| SDR 104 | 202 MHz | Tdodly | Data output delay | -1.45 | 0.85 |
| DDR 50 | 50 MHz | TclkH | Clock high time | 9 | 11 |
| DDR 50 | 50 MHz | Tcisu | Command input setup | N/A | 6.3 |
| DDR 50 | 50 MHz | Tcih | Command input hold | N/A | 1.5 |
| DDR 50 | 50 MHz | Tcodly | Command output delay | -8.2 | 3 |
| DDR 50 | 50 MHz | Tisu | Data input setup | N/A | 2 |
| DDR 50 | 50 MHz | Tih | Data input hold | N/A | 1.5 |
| DDR 50 | 50 MHz | Tdodly | Data output delay | 0.8 | 6 |
| SDR 50 | 100 MHz | TclkH | Clock high time | 3 | 7 |
| SDR 50 | 100 MHz | Tcisu | Command input setup | N/A | 2.5 |
| SDR 50 | 100 MHz | Tcih | Command input hold | N/A | 1.5 |
| SDR 50 | 100 MHz | Tcodly | Command output delay | -3.7 | 1.5 |
| SDR 50 | 100 MHz | Tisu | Data input setup | N/A | 2.5 |
| SDR 50 | 100 MHz | Tih | Data input hold | N/A | 1.5 |
| SDR 50 | 100 MHz | Tdodly | Data output delay | -3.7 | 1.5 |
| SDR 25 | 50 MHz | TclkH | Clock high time | 9 | 11 |
| SDR 25 | 50 MHz | Tcisu | Command input setup | N/A | 6 |
| SDR 25 | 50 MHz | Tcih | Command input hold | N/A | 1.5 |
| SDR 25 | 50 MHz | Tcodly | Command output delay | -7 | 3 |
| SDR 25 | 50 MHz | Tisu | Data input setup | N/A | 6 |
| SDR 25 | 50 MHz | Tih | Data input hold | N/A | 2.5 |
| SDR 25 | 50 MHz | Tdodly | Data output delay | -7 | 3 |
| | | | | | |
| | | | | | |
| | | | | | |
| | | | | | |
| | | | | | |
| | | | | | |
[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_secured-digital-interfaces) For DDR200, DDR52 and SD DDR50, command
input/output is only in single data rate (with respect to controller CLK falling
edge). Only data input/ output is running at DDR.
### USB interfaces
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported USB standards and their exceptions are listed here.
Table : Supported USB standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *Universal Serial Bus Specification, Revision 3.1* (August 11, 2014 or later) | SS Gen 1 |
| *On-The-Go and Embedded Host Supplement to the USB 3.0 Specification* (May 10, 2012, Revision 1.1 or later) | Attach detection protocol (ADP), role swap protocol (RSP), session request protocol (SRP), and host negotiation protocol (HNP) |
### DisplayPort
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported DisplayPort standards and their exceptions are listed here.
Table : Supported DisplayPort standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *VESA DisplayPort V1.4* | None |
### PCIe interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported PCIe standards and their exceptions are listed here.
Table : Supported PCIe standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| PCI Express Base Specification Revision 3.0 | Link configure capability |
### UFS interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported UFS standards and their exceptions are listed here.
Table : Supported UFS standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *Universal Flash Storage (UFS), Version 3.1* | None |
| *Universal Flash Storage (UFS), Version 2.1* | None |
### Digital microphone PDM interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the digital microphone PDM interface timing.
Figure : Digital microphone PDM interface timing

The supported Digital microphone timings are listed here.
| Parameter | Parameter | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- |
| 1/T | DMIC clock frequency | 0.6 | – | 6.144 | ns |
| 1/T | DMIC clock duty cycle | 45 | – | 55 | – |
| t(LSU) | Data left setup time to clock falling edge | – | – | – | ns |
| t(LH) | Data left hold time to clock falling edge | 0 | – | – | ns |
| t(RSU) | Data right setup time to clock rising edge | 10 | – | – | ns |
| t(RH) | Data right hold time to clock rising edge | 0 | – | – | – |
| | | | | | |
### SoundWire (SWR) interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430 chipsets SoundWire PHY timing parameters comply with
clock and data specifications, as specified in the MIPI Alliance Specification for
SoundWire Version 0.8, Revision 04.
Figure : PHY timing – clock output/input and data input

Figure : PHY timing – clock output and data output

The supported PHY timing parameters for 1.8 V systems are listed here.
Table : PHY timing parameters (1.8 V systems)
| Name | Description | Min | Max | Unit |
| --- | --- | --- | --- | --- |
| f\_Clock\_small\_1V8 | Frequency of clock signal in small systems | – | 12.288 | MHz |
| t\_High\_Clock\_small\_1V8 | Duration of high half-period on clock output signal in small systems | 35.3 | – | ns |
| t\_Low\_Clock\_small\_1V8 | Duration of Low half-period on Clock output signal in small systems | 35.3 | – | ns |
| t\_DZ\_Data\_1V8 | Time to disable data output signal after positive or negative edge on clock input signal | – | 4 | ns |
| t\_ZD\_Data\_1V8 | Time to enable data output signal after positive or negative edge on clock input signal | 7.9 | – | ns |
| t\_OV\_Data\_small\_1V8 | Time to valid data output signal after positive or negative edge on clock input signal in small systems | – | 27.6 | ns |
| t\_OH\_Data\_1V8 | Time for the data output signal to remain enabled and valid after first becoming
valid | 6.7 | – | ns |
| t\_ISetup\_min\_Data\_1V8 | Input setup time | 4 | – | ns |
| t\_IHold\_min\_Data\_1V8 | Input hold time | – | 5 | ns |
| DC\_Out\_Clock | Duty cycle generated at clock output signal. Calculated from
t\_Low\_Clock/(t\_Low\_Clock + t\_High\_Clock) | 46% of the SWR clock | 54% of the SWR clock | ns |
### SLIMbus interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported SLIMbus standards and their exceptions are listed here.
Table : Supported SLIMbus standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MIPI Alliance Specification for Serial Low-power Interchip Media Bus Version 1.01.01* | None |
### I²S interfaces
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
There are two supported I²S interface types:
- Legacy I²S interfaces for primary and secondary microphones and speakers
- The multiple I²S (MI2S) interface for microphone and speaker functions
The following information applies to both interface types. The supported I²S standards and
their exceptions are listed here.
Table : Supported I²S standards and exceptions
| Applicable standards | Feature exceptions |
| :---: | :---: |
| *Philips I²S Bus Specifications revised June 5, 1996* | None |
Figure : I²S timing diagram
The supported I²S interface timings are listed here.
| Parameter | Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** |
| Frequency [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_I2S-interfaces) | Frequency [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_I2S-interfaces) | – | – | – | 24.576 | MHz |
| T | Clock period | – | 40.69 | – | – | ns |
| **t**(HC) | Clock high | – | 0.45 × T | – | 0.55 × T | ns |
| **t**(LC) | Clock low | – | 0.45 × T | – | 0.55 × T | ns |
| **t**(sr) | SD and WS input setup time | – | 8.14 | – | – | ns |
| **t**(hr) | SD and WS input hold time | – | 1.5 | – | – | ns |
| **t**(dtr) | SD and WS output delay | – | – | – | 6.1 | ns |
| ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** |
| Frequency | Frequency | – | – | – | 24.576 | MHz |
| T | Clock period | – | 40.69 | – | – | ns |
| **t**(HC) | Clock high | – | 0.40 × T | – | 0.60 × T | ns |
| **t**(LC) | Clock low | – | 0.40 × T | – | 0.60 × T | ns |
| **t**(sr) | SD and WS input setup time | – | 8.14 | – | – | ns |
| **t**(hr) | SD and WS input hold time | – | 1.5 | – | – | ns |
| **t**(dtr) | SD and WS output delay | – | – | – | 6.1 | ns |
[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_I2S-interfaces) Load capacitance is between 10 pF
and 40 pF.
### Touchscreen connections
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Touchscreen panels are supported using I²C buses ([I²C/I3C interface](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#arb1612792921091)) and
GPIOs configured as discrete digital inputs ([Digital-logic characteristics](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603)). Additional specifications are not required.
### I²C/I3C interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported I²C standards and their exceptions are listed here.
Table : Supported I²C standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *I²C Specification, version 3.0* | HS mode, slave mode, multi-master mode, and 10‑bit addressing are not supported. |
| *I3C Specification, version 1.0* | Ternary, multi-master, HCI are not supported. |
### Serial peripheral interface
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The QCS6490 and QCS5430 chipsets support SPI as a master only.
Figure : SPI master timing diagram
The supported SPI master timing characteristics are listed here.
Table : SPI master timing characteristics
| Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- |
| T (SPI clock period) [^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_serial-peripheral-interface) | 50 MHz maximum | 20 | – | – | ns |
| t(ch) | Clock high | 8 | – | – | ns |
| t(cl) | Clock low | 8 | – | – | ns |
| t(mov) | Master output valid | -5 | – | 5 | ns |
| t(mis) | Master input setup | 5 | – | – | ns |
| t(mih) | Master input hold | 1 | – | – | ns |
[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_serial-peripheral-interface) The minimum clock period includes 1% jitter of maximum
frequency.
## Internal functions
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Some internal functions require external interfaces to enable their operation. These include clock generation, modes and resets, and JTAG functions.
### Clocks
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Clocks that are specific to particular functions are addressed in the corresponding topics of
this document. Others are specified here.
### 19.2 MHz CXO input
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the XO timing parameters.
Figure : XO timing parameters
The supported XO timing parameters are listed here.
| Parameter | Parameter | Comments[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_19-2-MHz-CXO-input) | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| t(xoh) | XO logic high | – | 22.6 | – | 29.5 | ns |
| t(xol) | XO logic low | – | 22.6 | – | 29.5 | ns |
| T | XO clock period | – | – | – | – | ns |
| 1/T | Frequency | 19.2 MHz must be used. | – | – | – | MHz |
[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_19-2-MHz-CXO-input) For more information, see the [GPS Quality, 19.2 MHz 2520 Package Size,
Crystal and TH+Xtal Mini-Specification (80-V9690-24).](https://docs.qualcomm.com/bundle/80-V9690-24/resource/80-V9690-24.pdf)
### Sleep clock
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the sleep-clock timing parameters.
Figure : Sleep-clock timing parameters
The supported sleep-clock timing parameters are listed here.
| Parameter | Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| t(xoh) | Sleep-clock logic high | – | 4.58 | – | 25.94 | µs |
| t(xol) | Sleep-clock logic low | – | 4.58 | – | 25.94 | µs |
| T | Sleep-clock period | – | – | 30.518 | – | µs |
| F | Sleep-clock frequency | F= 1/T | – | 32.768 | – | kHz |
| Vpp | Peak-to-peak voltage | – | – | 1.8 | – | V |
### Modes and resets
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
Mode and reset functions are basic digital I/Os that meet the performance specifications in [Digital-logic characteristics](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#nmg1612775927603).
### JTAG
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the JTAG interface timing diagram.
Figure : JTAG interface timing diagram
The supported JTAG interface timing characteristics are listed here.
| Parameter | Parameter | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- |
| t(tckcy) | TCK period | 50 | – | – | ns |
| t(tckh) | TCK pulse width high | 20 | – | – | ns |
| t(tckl) | TCK pulse width low | 20 | – | – | ns |
| t(sutms) | TMS input setup time | 5 | – | – | ns |
| t(htms) | TMS input hold time | 20 | – | – | ns |
| t(sutdi) | TDI input setup time | 5 | – | – | ns |
| t(htdi) | TDI input hold time | 20 | – | – | ns |
| t(do) | TDO data output delay | – | – | 15 | ns |
### SWD
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The following figure shows the SWD write and read AC timing diagram.
Figure : SWD write and read AC timing diagram
The supported AC timing parameters are listed here.
| Parameter[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_SWD) | Parameter[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fntarg_1_SWD) | Min | Max | Unit |
| --- | --- | --- | --- | --- |
| **T**os | SWDIO output skew to the falling edge of SWDCLK | -1 | T - 7.5 | ns |
| **T**su | Input setup time between SWDIO and the rising edge of SWDCLK | 6.5 | s | ns |
| **T**hd | Input hold the time between SWDIO and the rising edge of SWDCLK | 6.5 | – | ns |
[^1^](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html#fnsrc_1_SWD) SWDCLK runs at 20 MHz or
lower.
## RF front end (RFFE)
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported RFFE standards and their exceptions are listed here.
Table : Supported RFFE standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MIPI Alliance Specification for RF Front-End Control Interface version 2.0* | None |
## System power management interface (SPMI)
Source: [https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html](https://docs.qualcomm.com/doc/80-23889-1/topic/electrical-specifications.html)
The supported SPMI standards and their exceptions are listed here.
Table : Supported SPMI standards and exceptions
| Applicable standard | Feature exceptions |
| :---: | :---: |
| *MIPI Alliance Specification for System Power Management Interface (SPMI) version 1.0* | None |
Last Published: Sep 23, 2025
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