# Electrical specifications
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
This topic defines the device electrical performance specifications, including absolute maximum ratings, operating conditions, and subsystem (such as memory and connectivity) parameters, which are useful in deploying the device with optimal processing capabilities and high efficiency.
## Absolute maximum ratings
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The absolute maximum ratings table reflects the stress levels that, if exceeded, may cause permanent damage to the device. No functionality is guaranteed outside the operating specifications. Functionality and reliability are only guaranteed within the operating conditions described in [Operating conditions](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#lha1594361067630).
| Parameter | Parameter | Minimum | Maximum | Unit |
| --- | --- | --- | --- | --- |
| ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** |
| VDD\_APC | Kryo application processor | -0.30 | 1.36 | V |
| VDD\_CX | Digital core circuit | -0.30 | 1.18 | V |
| VDD\_CX\_WLAN | WLAN core circuit | -0.30 | 0.86 | V |
| VDD\_MX
VDD\_MX\_TXDAC
VDD\_A\_APC\_PLL\_0P9
VDD\_A\_EBI\_0\_0P9
VDD\_A\_EBI\_1\_0P9
VDD\_A\_DSI\_0P9
VDD\_A\_EBI\_CC\_0P9 | On-chip memory
TXDAC memory circuit
APC PLL circuit
EBI0 circuit
EBI1 circuit
DSI 0.9 V circuit
EBI clock circuit | -0.30 | 1.18 | V |
| VDD\_CX\_LPI | LPI digital core circuit | -0.30 | 1.18 | V |
| VDD\_MX\_LPI | LPI memory circuit | -0.30 | 1.18 | V |
| VDD\_A\_EBI\_PLL\_0P9
VDD\_A\_QREFS\_0P9 | EBI PLL circuit
Reference voltage for QREFS 0P9 circuit | -0.30 | 1.04 | V |
| VDD\_A\_USB\_HS\_1P8
WLAN ADC and DAC 1 | -0.3 | 1.43 | V |
| VDD\_A\_USB\_SS\_0P9
VDD\_USB\_HS\_0P9 | USB SS 0P9 circuit
USB HS 0.9 V circuit | 0.3 | 1.04 | V |
| VDD\_A\_USB\_HS\_3P1 | USB HS 3.1 V circuit | -0.3 | 3.52 | V |
| VDD\_SDCREF\_1P25
VDD\_REF\_1P25 | Reference voltage for SDC
Reference voltage | -0.3 | 1.43 | V |
| VDD\_PX0 | Pad group 0 | -0.3 | 2.09 | V |
| VDD\_PX1 | EBI I/O circuit | -0.3 | 1.37 | V |
| VDD\_PX2 | Pad group 2 – SDC2 pad
Low voltage
High voltage | -0.3 | 3.41 | V |
| VDD\_PX3 | Pad group 3 – most I/O pad | -0.3 | 2.09 | V |
| VDD\_PX5 | Pad group 5
Low voltage
High voltage | -0.3 | 3.41 | V |
| VDD\_PX6 | Pad group 6
Low voltage
High voltage | -0.3 | 3.41 | V |
| VDD\_PX7 | Pad group 7 – eMMC pad | -0.30 | 2.09 | V |
| TS | Storage temperature [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_Absolute_maximum_ratings) [^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_2_Absolute_maximum_ratings) | -55 | 150 | °C |
[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_1_Absolute_maximum_ratings) The storage temperature range applies when the device is in the OFF state (the device is not assembled in any platform and is not electrically connected to any voltage or I/O signals). Damage may occur when the device is subjected to this temperature for any length of time.
[^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_2_Absolute_maximum_ratings) For devices shipped in tape and reel, the storage temperature range is [+15°C~35°C] and < -90% relative humidity (RH). QTI recommends allowing the device to return to ambient room temperature before usage.
## Operating conditions
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Operating conditions include design team-controlled parameters such as power supply voltage,
power distribution impedances, and thermal conditions ([Table : Operating conditions](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#lha1594361067630__table_b1b_lyc_hlb)). The QRB2210 meets all performance specifications listed in [Power delivery network specification](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#zbg1594361113396) through [Power management interfaces](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#qsz1606112453689), when used
within the operating conditions, unless otherwise noted in those sections (provided the
absolute maximum ratings have never been exceeded).
| Parameter[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_Operating_conditions) | Parameter[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_Operating_conditions) | Min | Max | Unit |
| --- | --- | --- | --- | --- |
| ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** | ***Power supply voltages*** |
| VDD\_APC | Kryo application processor | | | V |
| VDD\_APC | Turbo-L2 | 0.87 | 1.23 | V |
| VDD\_APC | Turbo-L1 | 0.82 | 1.16 | V |
| VDD\_APC | Turbo | 0.76 | 1.07 | V |
| VDD\_APC | Nominal-L1 | 0.71 | 1.00 | V |
| VDD\_APC | Nominal | 0.68 | 0.94 | V |
| VDD\_APC | SVS-L1 | 0.62 | 0.86 | V |
| VDD\_APC | SVS | 0.57 | 0.78 | V |
| VDD\_APC | Low-SVS | 0.57 | 0.69 | V |
| VDD\_CX | Digital core circuits | | | V |
| VDD\_CX | Turbo-L1 | 0.79 | 1.07 | V |
| VDD\_CX | Turbo | 0.73 | 1.07 | V |
| VDD\_CX | Nominal-L1 | 0.69 | 1.00 | V |
| VDD\_CX | Nominal | 0.66 | 0.94 | V |
| VDD\_CX | SVS-U1 | 0.60 | 0.86 | V |
| VDD\_CX | SVS | 0.55 | 0.78 | V |
| VDD\_CX | Low-SVS | 0.49 | 0.69 | V |
| VDD\_CX\_LPI | LPI digital core circuits
Turbo
Nominal
SVS\_U1
SVS
Low\_SVS | 0.73
0.66
0.6
0.55
0.49 | 1.07
0.94
0.86
0.78
0.69 | V |
| VDD\_MX\_LPI | LPI memory circuits
Turbo
Nominal | 0.79
0.79 | 1.07
1.00 | V |
| VDD\_MX
VDD\_MX\_TXDAC
VDD\_A\_APC\_PLL\_0P9
VDD\_A\_EBI\_0\_0P9
VDD\_A\_EBI\_1\_0P9
VDD\_A\_DSI\_0P9
VDD\_A\_EBI\_CC\_0P9 | Memory and analog PLL circutis
VDD\_A\_PLL\_HV\_CC\_EBI\_1P2 | CSI0 1.2 V circuit
CSI1 1.2 V circuit
DSI PLL circuit
DSI 1.2 V circuit
Low voltage – analog circuit
EBI PLL high voltage circuit | 1.15 | 1.20 | 1.26 | V |
| VDD\_IO\_EBI\_0\_CK
VDD\_IO\_EBI\_1\_CK
VDD\_IO\_EBI | EBI0 I/O clock circuit
EBI1 I/O clock circuit
EBI I/O circuit
(**Note:** This value is for LPDDR4X) | 0.59 | 0.60 | 0.63 | V |
| VDD\_IO\_EBI\_0\_CK
VDD\_IO\_EBI\_1\_CK
VDD\_IO\_EBI | EBI0 I/O clock circuit
EBI1 I/O clock circuit
EBI I/O circuit
(**Note:** This value is for LPDDR3) | 1.15 | 1.20 | 1.25 | V |
| VDD\_A\_WLAN\_ADCDAC0\_1P3
VDD\_A\_WLAN\_ADCDAC1\_1P3 | WLAN ADC and DAC 0
WLAN ADC and DAC 1 | 1.25 | – | 1.30 | V |
| VDD\_A\_USB\_SS\_0P9
VDD\_USB\_HS\_0P9 | USB SS 0.9 V circuit
USB HS 0.9 V circuit | 0.89 | 0.92 | 0.95 | V |
| VDD\_A\_USB\_HS\_3P1 | USB HS 3.1 V circuit | 2.95 | 3.10 | 3.20 | V |
| VDD\_SDCREF\_1P25
VDD\_REF\_1P25 | Reference voltage for SDC
Reference voltage | 1.15 | 1.25 | 1.30 | V |
| VDD\_PX0 | Pad group 0 | 1.7 | 1.8 | 1.9 | V |
| VDD\_PX1 | EBI I/O circuit
(**Note:** This value is for LPDDR4X) | 1.05 | 1.10 | 1.15 | V |
| VDD\_PX1 | EBI I/O circuit
(**Note:** This value is for LPDDR3) | 1.15 | 1.20 | 1.25 | V |
| VDD\_PX2 | Pad group 2 – SDC2 pad | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX2 | Low voltage | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX2 | High voltage | 2.70 | 2.95 | 3.10 | V |
| VDD\_PX3 | Pad group 3 – most I/O pad | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX5 | Pad group 5 | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX5 | Low voltage | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX5 | High voltage | 2.70 | 2.95 | 3.10 | V |
| VDD\_PX6 | Pad group 6 | | | | V |
| VDD\_PX6 | Low voltage | 1.70 | 1.80 | 1.90 | V |
| VDD\_PX6 | High voltage | 2.70 | 2.95 | 3.10 | V |
| VDD\_PX7 | Pad group 7 – eMMC pad | 1.70 | 1.80 | 1.90 | V |
| ***Thermal conditions*** | ***Thermal conditions*** | ***Thermal conditions*** | ***Thermal conditions*** | ***Thermal conditions*** | ***Thermal conditions*** |
| T | Device operating temperature | Tambient = -30 | – | Tjunction = +95 | °C |
| | | | | | |
| | | | | | |
[^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_2_Operating_conditions) Parts with voltages outside of the
specified ranges are not guaranteed to operate properly.
[^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_3_Operating_conditions) Typical voltages represent the recommended output settings of the companion PMIC device.
### Core and memory voltage minimization (retention mode)
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The MPM supports VDD minimization, also known as VDD\_CORE and VDD\_MEM retention mode. This technique reduces the leakage of the digital logic by reducing VDD to the minimum required to maintain the register and memory state.
The V(MIN) for state retention is found through characterization.
| VDD\_CORE | Bit 31 (MSB) | Bit 30 | Bit 29 (LSB) |
| --- | --- | --- | --- |
| 0.4 V | 1 | 0 | 0 |
| 0.45 V | 0 | 1 | 1 |
| 0.5 V | 0 | 1 | 0 |
| 0.55 V | 0 | 0 | 1 |
| 0.6 V | 0 | 0 | 0 |
| Note:
The VDD_CORE voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40184.
| Note:
The VDD_CORE voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40184.
| Note:
The VDD_CORE voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40184.
| Note:
The VDD_CORE voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40184.
|
| VDD\_MEM | Bit 19 (MSB) | Bit 18 | Bit 17 (LSB) |
| --- | --- | --- | --- |
| 0.49 V | 1 | 0 | 0 |
| 0.55 V | 0 | 1 | 1 |
| 0.58 V | 0 | 1 | 0 |
| 0.65 V | 0 | 0 | 1 |
| 0.7 V | 0 | 0 | 0 |
| Note:
The VDD_MEM voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40198.
| Note:
The VDD_MEM voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40198.
| Note:
The VDD_MEM voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40198.
| Note:
The VDD_MEM voltages specified are PMIC settings.
For fuse locations listed in this table, see register 0x1B40198.
lumped port | Maximum DC resistance (mΩ) | Maximum impedance Z[^4^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_4_Power_delivery_network_specification)(mΩ) | Maximum impedance Z[^4^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_4_Power_delivery_network_specification)(mΩ) | Positive pins | Negative pins |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| Power regulator | Power domain | PDN ports | Maximum DC resistance (mΩ)
lumped port | Maximum DC resistance (mΩ) | Rmid_freq (mΩ) | Inductance (pH) | Positive pins | Negative pins |
| VREG\_L13A | VDD\_A\_USB\_HS\_1P8 | 1 | 68 | 700 | 235 | 1500 | M24 | L24 |
| VREG\_L13A | VDD\_A\_USB\_SS\_DP\_1P8 | 2 | 68 | 1300 | 235 | 1500 | L25 | L24, K25 |
| VREG\_L21A | VDD\_A\_USB\_HS\_3P1 | 1 | – | 700 | 235 | 1500 | M23 | L24, M22 |
| VREG\_L5A | VDD\_A\_DSI\_1P2 | 1 | 97 | 1350 | 157 | 1000 | P23 | R23 |
| VREG\_L5A | VDD\_A\_DSI\_PLL | 2 | 97 | 4000 | 235 | 1500 | N24 | N25, P25 |
| VREG\_L5A | VDD\_A\_CSI\_0\_1P2 | 3 | 97 | 450 | 235 | 1500 | R7 | P6, P7, P8, R6, T6 |
| VREG\_L5A | VDD\_A\_CSI\_1\_1P2 | 4 | 97 | 450 | 235 | 1500 | T7 | R6, T6, U6 |
| VREG\_L12A | VDD\_A\_USB\_SS\_0P9 | 1 | 128 | 130 | 157 | 1000 | K24 | J25, K25 |
| VREG\_L12A | VDD\_USB\_HS\_0P9 | 2 | 128 | 1400 | 157 | 1020 | M25 | M26, N26, N25 |
| VREG\_L1A | VDD\_A\_DSI\_0P9 | 1 | – | 450 | 235 | 1500 | P24 | P25, R23 |
| | | | | | | | | |
| | | | | | | | | |
| | | | | | | | | |
[^4^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_4_Power_delivery_network_specification) The PDN AC impedance specification (mask) is obtained by plotting Impedance Zspec using Rmid_freq and inductance (L) values from this table. Zspec
## DC power characteristics
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
### Average operating current
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Detailed current consumption information and details about the operating modes tested are
available in the document *QRB2210 Linux Android Current Consumption Data (80-30843-7; to be released)*.
### Dhrystone and rock bottom maximum power
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Dhrystone and rock bottom maximum power
| SDM version | Quad core at 2 GHz, Dhrystone (W) at +95°C (Tj)[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_Dhrystone_and_rock_bottom_maximum_power)[^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_2_Dhrystone_and_rock_bottom_maximum_power)[^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_3_Dhrystone_and_rock_bottom_maximum_power) | Rock bottom (mW) at 30°C (Tj)[^4^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_4_Dhrystone_and_rock_bottom_maximum_power) |
| :---: | :---: | :---: |
| QRB2210 | 1.5 | 10.4 |
[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_1_Dhrystone_and_rock_bottom_maximum_power) Temperature reading is from
the QRB2210 device’s internal temperature sensor.
[^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_2_Dhrystone_and_rock_bottom_maximum_power) Dhrystone power should be measured on the VDD\_APC rail, right before PDN
capacitors (with a small serial sampling resistor inserted, if necessary).
[^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_3_Dhrystone_and_rock_bottom_maximum_power) Measurement sampling rate should be > 1.25 Msps (or < 0.8 μs), and the
average window should be > 1 ms (or > 1250 samples).
[^4^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_4_Dhrystone_and_rock_bottom_maximum_power) Rock bottom (VDD\_CORE and VDD\_MEM) power
should be measured at VDD\_CORE and VDD\_MEM rails when VDD\_CORE and VDD\_MEM are at
retention voltage. See AIR1 in Table 3.1 (Test definitions) in the *QRB2210 Android Current Consumption Data (80-30843-7; to be released)*.
## Power sequencing
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The PMIC includes power-on circuits that provide the proper power sequencing for the entire
QRB2210 chipset. The supplies are turned on as groups of regulators
that are selected by the hardware configuration of some PMIC pins. See the appropriate PMIC
device specification, such as the [PM4125 Power Management IC Data Sheet (80-PW090-1)](https://docs.qualcomm.com/bundle/80-PW090-1/resource/80-PW090-1.pdf).
A high-level summary of the required default power-on sequence is:
| Sequence | Power domain |
| :--- | :--- |
| 1. | VDD\_MX, VDD\_MX\_TXDAC, VDD\_A\_APC\_PLL\_0P9, VDD\_A\_EBI\_0\_0P9, VDD\_A\_EBI\_1\_0P9, VDD\_A\_DSI\_0P9, VDD\_A\_EBI\_CC\_0P9 |
| 2. | VDD\_MX\_LPI |
| 3. | VDD\_CX |
| 4. | VDD\_CX\_LPI |
| 5. | VDD\_CX\_WLAN |
| 6. | VDD\_PX0, VDD\_PX3, VDD\_PX7 |
| 7. | VREF\_MSM |
| 8. | VDD\_A\_CSI\_0\_1P2, VDD\_A\_CSI\_1\_1P2, VDD\_A\_DSI\_PLL\_1P2, VDD\_A\_DSI\_1P2, VDD\_A1, VDD\_A\_PLL\_HV\_CC\_EBI\_1P2 |
| 9. | VDD\_A\_USB\_SS\_0P9, VDD\_USB\_HS\_0P9 |
| 10. | VDD\_A\_EBI\_PLL\_0P9, VDD\_A\_QREFS\_0P9 |
| 11. | VDD\_PX1 |
| 12. | VDD\_IO\_EBI\_0\_CK, VDD\_IO\_EBI\_1\_CK, VDD\_IO\_EBI |
| 13. | VREF\_LPDDR3 |
| 14. | VDD\_QFPROM, VDD\_PX11, VDD\_A2, VDD\_A\_USB\_SS\_1P8, VDD\_A\_USB\_HS\_1P8, VDD\_A\_AUDIO\_PLL\_1P8, VDD\_A\_CAMSS\_PLL\_1P8, VDD\_A\_WLAN\_PLL\_1P8, VDD\_A\_MODEM\_PLL\_1P8 |
| 15. | VDD\_PX2 |
| 16. | VDD\_A\_USB\_HS\_3P1 |
| 17. | VDD\_APC |
This sequence includes:
- The core voltage (VDD\_CX) needs to power up before the pad circuits (VDD\_PX), so that the internal circuits can take control of the I/Os and pads.
- If pad voltages power-up first, the output drivers might be stuck in unknown states and might cause large leakage currents until VDD\_CX powers on.
- Any other appropriate supplies can be powered on by software after the sequence is completed.
- Each domain needs to reach its 90% value before the next domain starts ramping up. For example, when VDD\_CX reaches 90% of its value, the VDD\_CX\_LPI supply can start ramping up.
## Digital-logic characteristics
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
A digital I/O’s performance specification depends on its pad type, its usage, and/or its supply voltage:
- Some are dedicated for interconnections between the QRB2210 device and other ICs within the QTI chipset; therefore, specifications are not required.
- Some are defined by existing standards, such as I^2^C and SPI. QTI devices comply with those standards; therefore, additional specifications are not required.
- All other digital I/Os require performance specifications.
| Parameter | Description | Min | Max | Units |
| --- | --- | --- | --- | --- |
| VIH | High-level input voltage, CMOS/Schmitt (HIHYS\_EN = low) | 0.65 × VDDPX | VDDPX + 0.3 V | V |
| VIL | Low-level input voltage, CMOS/Schmitt (HIHYS\_EN = low) | -0.3 V | 0.35 × VDDPX | V |
| VIH | High-level input voltage, CMOS/Schmitt (HIHYS\_EN = high) | 0.7 × VDDPX | VDDPX + 0.3 V | V |
| VIL | Low-level input voltage, CMOS/Schmitt (HIHYS\_EN = high) | -0.3 V | 0.3 × VDDPX | V |
| VSHYS | Schmitt hysteresis voltage (HIHYS\_EN= low) | 100 | – | mV |
| VSHYS | Schmitt hysteresis voltage (HIHYS\_EN = high) | 300 | – | mV |
| IIH | Input high leakage current [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942__fn_slp_1n3_jlb) | – | 1.0 | µA |
| IIL | Input low leakage current [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942__fn_slp_1n3_jlb) | -1.0 | – | µA |
| IIHPD | Input high leakage current with pull-down | 27.5
(60) | 97.5
(20) | µA
(kΩ) |
| IILPU | Input low leakage current with pull-up | -97.5
(20) | -27.5
(60) | µA
(kΩ) |
| IOZH | High-level, tri-state leakage current [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942__fn_slp_1n3_jlb) | – | 1.0 | µA |
| IOZL | Low-level, tri-state leakage current [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942__fn_slp_1n3_jlb) | -1.0 | – | µA |
| IOZHPD | High-level, tri-state leakage current with pull-down | 27.5 | 97.5 | µA |
| IOZHPD | High-level, tri-state leakage current with pull-down | (60) | (20) | (kΩ) |
| IOZLPU | Low-level, tri-state leakage current with pull-up | -97.5 | -27.5 | µA |
| IOZLPU | Low-level, tri-state leakage current with pull-up | (20) | (60) | (kΩ) |
| IOZHKP | High-level, tri-state leakage current with keeper [^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_2_Digital_logic_characteristics) | -22.5 | -7.5 | µA |
| IOZHKP | High-level, tri-state leakage current with keeper [^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_2_Digital_logic_characteristics) | (20) | (60) | (kΩ) |
| IOZLKP | Low-level, tri-state leakage current with keeper [^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_3_Digital_logic_characteristics) | 7.5 | 22.5 | µA |
| IOZLKP | Low-level, tri-state leakage current with keeper [^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_3_Digital_logic_characteristics) | (60) | (20) | (kΩ) |
| VOH | High-level output voltage, CMOS | VDDPX - 0.45 | VDDPX | V |
| VOL | Low-level output voltage, CMOS | 0.0 | 0.45 | V |
| | | | | |
^1^ IIH, IIL, IOZH, and IOZL values are based on nominal PVT (TT/25°C).
[^2^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_2_Digital_logic_characteristics) Pin voltage = VDDPX maximum. For keeper pins, pin voltage = VDDPX maximum - 0.45 V.
[^3^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_3_Digital_logic_characteristics) Pin voltage = GND and supply = VDDPX maximum. For keeper pins, pin voltage = 0.45 V and supply = VDDPX maximum.
Table : SDC 2.95 V mode DC specifications (VDDPX_2)
| Parameter | Description | Min | Typ | Max | Units |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 0.625 × VDDPX | – | VDDPX + 0.3 | V |
| VIL | Low-level input voltage | - 0.3 | – | 0.25 × VDDPX | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | – | – | 10 | µA |
| IIL | Input low leakage current | -10 | – | – | µA |
| IOZH | High-level, tri-state leakage current | – | – | 10 | µA |
| IOZL | Low-level, tri-state leakage current | -10 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage | 0.75 × VDDPX | – | VDDPX | V |
| VOL | Low-level output voltage | 0 | – | 0.125 × VDDPX | V |
Table : SDC 1.8 V mode DC specifications (VDDPX_2)
| Parameter | Description | Min | Typ | Max | Units |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 1.27 | – | 2 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.58 | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | – | – | 5 | µA |
| IIL | Input low leakage current | -5 | – | – | µA |
| IOZH | High-level, tri-state leakage current | – | – | 5 | µA |
| IOZL | Low-level, tri-state leakage current | -5 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage | 1.4 | – | – | V |
| VOL | Low-level output voltage | – | – | 0.45 | V |
Table : VDDPX_5 and VDDPX_6 2.95 V mode DC specifications
| Parameter | Description | Min | Typ | Max | Units |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 0.7 × VDDPX | – | VDDPX + 0.3 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.2 × VDDPX | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | -20 | – | 20 | µA |
| IIL | Input low leakage current | – | – | 1000 | µA |
| IOZH | High-level, tri-state leakage current | – | – | 10 | µA |
| IOZL | Low-level, tri-state leakage current | -10 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage | 0.8 × VDDPX | – | VDDPX | V |
| VOL | Low-level output voltage | 0 | – | 0.4 | V |
Table : VDDPX_5 and VDDPX_6 1.8 V mode DC specifications
| Parameter | Description | Min | Typ | Max | Units |
| :---: | --- | :---: | :---: | :---: | :---: |
| VIH | High-level input voltage | 0.7 × VDDPX | – | VDDPX + 0.3 | V |
| VIL | Low-level input voltage | -0.3 | – | 0.2 × VDDPX | V |
| VHYS | Schmitt hysteresis voltage | 100 | – | – | mV |
| IIH | Input high leakage current | -20 | – | 20 | µA |
| IIL | Input low leakage current | – | – | 1000 | µA |
| IOZH | High-level, tri-state leakage current | – | – | 5 | µA |
| IOZL | Low-level, tri-state leakage current | -5 | – | – | µA |
| RPULL-UP | Pull-up resistance | 10 | – | 100 | kΩ |
| RPULL-DOWN | Pull-down resistance | 10 | – | 100 | kΩ |
| RKEEPER-UP | Keeper-up resistance | 10 | – | 100 | kΩ |
| RKEEPER-DOWN | Keeper-down resistance | 10 | – | 100 | kΩ |
| VOH | High-level output voltage | 0.8 × VDDPX | – | VDDPX | V |
| VOL | Low-level output voltage | 0 | – | 0.4 | V |
## Timing characteristics
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Specifications for the device timing characteristics are included (where appropriate) under each function’s section, along with all its other performance specifications. Some general comments about timing characteristics and pertinent pad design methodologies are included here.
Note: All QRB2210 devices are characterized with actively terminated loads; therefore, all baseband timing parameters in this document assume no bus loading. This is described further in [Rise and fall time specifications](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#mpw1605871078936).
### Timing diagram conventions
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The conventions used within timing diagrams throughout this document are shown in the figure below.
Figure : Timing diagram conventions
For each signal in the diagram:
- One clock period (T) extends from one rising clock edge to the next rising clock edge.
- The high level represents 1, the low level represents 0, and the middle level represents the floating (high-impedance) state.
- When both the high and low levels are shown over the same time interval, the meaning depends on the signal type:
- For a bus type signal (multiple bits), the processor or external interface is driving a value, but that value may or may not be valid.
- For a single signal, this indicates don’t care.
### Rise and fall time specifications
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The testers that characterize QRB2210 devices have actively terminated loads, making the rise and fall times quicker (mimicking a no-load condition). The impact that different external load conditions have on rise and fall times is shown in the figure below.
Figure : Rise and fall times under different load conditions
To account for external load conditions, rise or fall times must be added to parameters that start timing at the QRB2210 device and terminate at an external device (or vice versa). Adding these rise and fall times is equivalent to applying capacitive load derating factors.
### Pad design methodology
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The QRB2210 device uses a generic CMOS pad driver design. The intent
of the pad design is to create pin response and behavior that is symmetric, with respect to
the associated VDD_PX supply ([Figure : Digital input-signal switch points](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#bij1605871468862__fig_bmt_qb3_ckb)). The input switch
point for pure input-only pads is designed to be VDD_PX/2 (or 50% of
VDD_PX). The documented switch points (guaranteed over worst-case combinations of
process, voltage, and temperature by both design and characterization) are 35% of
VDD_PX for VIL and 65% of VDD_PX for VIH.
Figure : Digital input-signal switch points
Outputs (such as addresses, chip selects, and clocks) are designed and characterized to
source or sink a large DC output current (several mA) at the documented VOH (min)
and VOL (max) levels over worst-case process/voltage/temperature. Because the pad
output structures ([Figure : Output pad equivalent circuit](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#bij1605871468862__fig_vtj_pc3_ckb))
are essentially CMOS drivers that possibly have a small amount of IR loss (estimated at less
than 50 mV under worst-case conditions), the expected zero DC load outputs are estimated to
be:
- VOH ~ VDD_PX - 50 mV or more
- VOL ~ 50 mV or less
Figure : Output pad equivalent circuit
The DC output drive strength can be approximated by linear interpolations between VOH (min) and VDD_PX - 50 mV, and between VOL (max) and 50 mV. For example, an output pad driving low that guarantees 4.5 mA at VOL (max) will provide approximately 3.0 mA or more at 2/3 × [VOL (max) - 50 mV], and 1.5 mA or more at 1/3 × [VOL (max) - 50 mV]. Likewise, an output pad driving high that guarantees 2.5 mA at VOH (min) will provide approximately 1.25 mA or more at ½ × [VDD_PX - 50 mV + VOH (min)].
The output pads are essentially CMOS outputs with a corresponding FET-type output voltage/current transfer function. When an output pad is shorted to the opposite power rail, the pad is capable of sourcing or sinking ISC (SC = short-circuit) of current, where the magnitude of ISC is larger than the current capability at the intended output logic levels.
Since the target application includes a radio, output pads are designed to minimize output slew rates. Decreased slew rates limit high-frequency spectral components that tend to desensitize the companion radio.
Output drivers’ rise time (**t**(r)) and fall time (**t**(f)) values are functions of board loading.
Bi-directional pins include both input and output pad structures, and behave accordingly when
used as inputs or outputs within the system. Both the input and output behaviors were
described above.
## Memory support
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
All timing parameters in this document assume no bus loading. Rise/fall time numbers must be factored into the numbers in this document. For example, setup time numbers will get worse, and hold time numbers may improve.
### EBI0 and EBI1 memory support
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
EBI0 and EBI1 are dedicated non-PoP type LPDDR4X or LPDDR3 memory. It supports LPDDR4X and LPDDR3 SDRAM memory parts that are compliant with the *JEDEC Standard for Low-Power Double Data Rate 4 SDRAM* (JESD209-4-1) and *JEDEC Standard for Low-Power Double Data Rate 3* (JESD209-3B).
### eMMC on SDC1
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
eMMC NAND flash can be supported via the SDC1 port. See [SD interfaces](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#bcd1606107209335) for secure digital interface details.
## Multimedia
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Multimedia parameters requiring performance specification are addressed in this section.
### Camera interfaces
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The QRB2210 device supports three 4-lane DPHY or CPHY camera interfaces.
Table : Supported MIPI_CSI standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| *MIPI Alliance Specification for DPHY v1.2* | Supports only unidirectional data receiving |
| *MIPI Alliance Specification for CPHY v1.0* | None |
### Audio support
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The QRB2210 supports the PM4125 audio codec IC through SourndWire interface to provide the system’s audio functions.
Other audio-related interface options include:
- I^2^S – [I2S interfaces](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#ptw1606107508695)
- Digital microphone – [Digital microphone PDM interface](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hxm1606107682446)
- SoundWire – [SoundWire](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#xxi1606107799916)
- I^2^C – [I2C interface](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#bsy1606108055605)
### Display support
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The QRB2210 device supports one 4-lane MIPI DSI port.
Table : Supported MIPI_DSI standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| *MIPI Alliance Specification for Display Serial Interface* | None |
| *MIPI Alliance Specification for D-PHY v1.2* | None |
## Connectivity
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The connectivity functions supported by the QRB2210 that require electrical specifications include:
- SD, including SD cards and multimedia cards (MMC)
- USB host/slave support with built-in physical layer (PHY)
- Serial low-power interchip media bus (SLIMbus) interface
- Inter-IC sound (I^2^S) interfaces
- Touchscreen connections
- Dedicated I^2^C interfaces for camera (CCI I2C)
- Through proper configuration of the 10 QUP ports:
- Universal asynchronous receiver/transmitter (UART) ports
- Inter-integrated circuit (I^2^C) interfaces
- Serial peripheral interface (SPI) ports
- I3C interface for sensor support
Pertinent specifications for these functions are detailed in the following subsections.
Note: In addition to the following hardware specifications, see the latest software release notes for software-based performance features or limitations.
### SD interfaces
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported SD standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| Multimedia Card Host Specification, version 5.1 | None |
| Secure Digital: Physical Layer Specification version 3.0 | None |
| SDIO Card Specification version 3.0 | None |
Figure : SD interface timing
### USB interfaces
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported USB standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| *Universal Serial Bus Specification, Revision 3.1* (August 11, 2014 or later) | SS Gen 2 |
| *Universal Serial Bus Specification, Revision 2.0* (April 27, 2000 or later) | Low speed is not supported in device mode |
| *On-The-Go Supplement to the USB 2.0 Specification* (June 24, 2003, Revision 1.0 A or later) | Supports the host mode aspect of OTG only |
### I^2^S interfaces
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported I2S standards and exceptions
| Applicable standards | Feature exceptions |
| --- | --- |
| *Philips I2S Bus Specifications revised June 5, 1996 (Available for free download.)* | None |
Figure : I^2^S timing diagram
| Parameter | Parameter | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- |
| ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** | ***Using internal SCK*** |
| | Frequency | – | – | 24.576 | MHz |
| T | Clock period | 40.69 | – | – | ns |
| **t**(HC) | Clock high | 0.4 × T | – | 0.6 × T | ns |
| **t**(LC) | Clock low | 0.4 × T | – | 0.6 × T | ns |
| **t**(sr) | SD and WS input setup time | 8.14 | – | – | ns |
| **t**(hr) | SD and WS input hold time | 0 | – | – | ns |
| **t**(dtr) | SD and WS output delay | – | – | 6.10 | ns |
| **t**(htr) | SD and WS output hold time | 0 | – | – | ns |
| ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** | ***Using external SCK*** |
| | Frequency | - | – | 24.576 | MHz |
| T | Clock period | 40.69 | – | – | ns |
| **t**(HC) | Clock high | 0.4 × T | – | 0.6 × T | ns |
| **t**(LC) | Clock low | 0.4 × T | – | 0.6 × T | ns |
| **t**(sr) | SD and WS input setup time | 8.14 | – | – | ns |
| **t**(hr) | SD and WS input hold time | 0 | – | – | ns |
| **t**(dtr) | SD and WS output delay | – | – | 6.10 | ns |
| **t**(htr) | SD and WS output hold time | – | – | – | ns |
| Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. | Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. | Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. | Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. | Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. | Note: I^2^S slave support of 24.576 MHz is available only with I^2^S1. |
### Digital microphone PDM interface
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Figure : Digital microphone PDM interface timing

| Parameter | Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| T | DMIC clock period | – | 163 | – | 1666 | ns |
| t(LSU) | Data left setup time to clock falling edge | – | 5 | – | – | ns |
| t(LH) | Data left hold time to clock falling edge | – | 0 | – | – | ns |
| t(RSU) | Data right setup time to clock rising edge | – | 5 | – | – | ns |
| t(RH) | Data right hold time to clock falling edge | – | 0 | – | – | ns |
### SoundWire
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
QRB2210 SoundWire PHY timing parameters, as specified in the following table, are compliant to clock and data specifications, as specified in the MIPI Alliance Specification for SoundWire Version 0.8, Revision 04. See the following figures.
Figure : PHY timing – clock output/input and data input

Figure : PHY timing – clock output and data output

Table : PHY timing parameters (1.8 V systems)
| Name | Description | Min | Max | Unit |
| --- | --- | :---: | :---: | :---: |
| f\_Clock\_small\_1V8 | Frequency of clock signal in small systems | – | 12.288 | kHz |
| t\_High\_Clock\_small\_1V8 | Duration of high half-period on clock output signal in small systems | 35.3 | – | ns |
| t\_Low\_Clock\_small\_1V8 | Duration of low half-period on clock output signal in small systems | 35.3 | – | ns |
| t\_DZ\_Data\_1V8 | Time to disable data output signal after positive or negative edge on clock input signal | – | 4 | ns |
| t\_ZD\_Data\_1V8 | Time to enable data output signal after positive or negative edge on clock input signal | 7.9 | – | ns |
| t\_OV\_Data\_small\_1V8 | Time to valid data output signal after positive or negative edge on clock input signal in small systems | – | 27.6 | % |
| t\_OH\_Data\_1V8 | Time for data output signal to remain enabled and valid after first becoming valid | 6.7 | – | ns |
| t\_ISetup\_min\_Data\_1V8 | Input setup time | – | 0 | ns |
| t\_IHold\_min\_Data\_1V8 | Input hold time | – | 4 | ns |
| DC\_Out\_Clock | Duty cycle generated at clock output signal calculated from t\_Low\_Clock/(t\_Low\_Clock + t\_ High\_Clock) | 46% of the SWR CLK | 54% of the SWR CLK | ns |
### Touchscreen connections
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Touchscreen panels are supported using I^2^C buses ([I2C interface](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#bsy1606108055605)) and GPIOs configured as discrete digital inputs ([Digital-logic characteristics](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942)).
### I^2^C interface
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported I2C standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| *I^2^C Specification, version 3.0* | HS mode, slave mode, and 10-bit addressing are not supported. |
### I3C interface
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported I3C standards and exceptions
| Applicable standard | Feature exceptions |
| --- | :---: |
| *I3C Specification, version 1.0* | None |
### Serial peripheral interface
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The QRB2210 supports SPI as a master only. Only six out of 10 QUP ports can be configured as an SPI master.
Figure : SPI master timing diagram
Table : SPI master timing characteristics
| Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | :---: | :---: | :---: | :---: |
| T (SPI clock period) [^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_Serial_peripheral_interface) | 50 MHz maximum | 20 | – | – | ns |
| t(ch) | Clock high | 9 | – | – | ns |
| t(cl) | Clock low | 9 | – | – | ns |
| t(mov) | Master output valid | -5 | – | 5 | ns |
| t(mis) | Master input setup | 5 | – | – | ns |
[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_1_Serial_peripheral_interface) The minimum clock period includes 1% jitter of maximum frequency.
## Internal functions
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Some internal functions require external interfaces to enable their operation. These include clock generation, modes and resets, and JTAG functions.
### Clocks
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Clocks that are specific to particular functions are addressed in the corresponding sections of this document. Others are specified here.
### 19.2 MHz CXO input
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Figure : XO timing parameters
| Parameter | Parameter | Comments[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fntarg_1_19_2_MHz_CXO_input) | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| **t**(xoh) | XO logic high | – | 22.6 | – | 29.5 | ns |
| **t**(xol) | XO logic low | – | 22.6 | – | 29.5 | ns |
| T | XO clock period | – | – | 52.083 | – | ns |
| 1/T | Frequency | 19.2 MHz must be used | – | 19.2 | – | MHz |
[^1^](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#fnsrc_1_19_2_MHz_CXO_input) See the [GPS Quality, 19.2 MHz 2520 Package Size,
Crystal, and TH + Xtal Mini-Specification (80-V9690-24)](https://docs.qualcomm.com/bundle/80-V9690-24/resource/80-V9690-24.pdf) document
for more details.
### Sleep clock
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Figure : Sleep clock timing parameters
| Parameter | Parameter | Comments | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| t(xoh) | Sleep-clock logic high | – | 4.58 | – | 25.94 | µs |
| t(xol) | Sleep-clock logic low | – | 4.58 | – | 25.94 | µs |
| T | Sleep-clock period | – | – | 30.518 | – | µs |
| F | Sleep-clock frequency | F= 1/T | – | 32.768 | – | kHz |
| Vpp | Peak-to-peak voltage | – | – | 1.8 | – | V |
### Modes and resets
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Mode and reset functions are basic digital I/Os that meet the performance specifications presented in [Digital-logic characteristics](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942).
### JTAG
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Figure : JTAG interface timing diagram
| **Parameter** | **Parameter** | **Min** | **Typ** | **Max** | **Unit** |
| --- | --- | --- | --- | --- | --- |
| t(tckcy) | TCK period | 50 | – | – | ns |
| t(tckh) | TCK pulse width high | 20 | – | – | ns |
| t(tckl) | TCK pulse width low | 20 | – | – | ns |
| t(sutms) | TMS input setup time | 5 | – | – | ns |
| t(htms) | TMS input hold time | 20 | – | – | ns |
| t(sutdi) | TDI input setup time | 5 | – | – | ns |
| t(htdi) | TDI input hold time | 20 | – | – | ns |
| t(do) | TDO data output delay | – | – | 15 | ns |
## Power management interfaces
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
The digital I/Os must meet the logic-level requirements specified in
[Digital-logic characteristics](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html#hqk1605596536942). The Rx and Tx
baseband interfaces are proprietary, and therefore are not specified.
### System power management interface (SPMI)
Source: [https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html](https://docs.qualcomm.com/doc/80-30843-1/topic/Electrical_specifications.html)
Table : Supported SPMI standards and exceptions
| Applicable standard | Feature exceptions |
| --- | --- |
| *MIPI Alliance Specification for System Power Management Interface (SPMI) version 1.0* | None |
Last Published: Oct 08, 2025
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