# Part reliability

Source: [https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html)

This topic provides the reliability data, including a definition of the qualification samples
      and a summary of qualification test results.

## Reliability qualifications summary

Source: [https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html)

| Stress | ABV | Test no. | Test method | Test conditions/pre and post ATE (identify temperature,<br>                            RH, and bias) | Requirements | Requirements | Results | Comments |
| --- | --- | --- | --- | --- | --- | --- | --- | --- |
| Stress | ABV | Test no. | Test method | Test conditions/pre and post ATE (identify temperature,<br>                            RH, and bias) | S.S. per lot | # Lots | Fails/total S.S. | Comments |
| ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** | ***Test group A – accelerated                                    environment stress tests*** |
| Preconditioning | PC | A1 | JEDEC-J-STD-020, JESD22-A113 | MSL 3, 3X reflow (pre and post ATE at R) | 231 | 3 | 0F/693 (693) | Pass SPIL, (ATK) |
| Preconditioning + biased HAST | HAST | A2 | JEDEC-JESD22-A110 | 130°C/85%RH for 96 hours (pre and post ATE at R and H) | 77 | 3 | 0F/231 (231) | Pass SPIL, (ATK) |
| Preconditioning + unbiased HAST/temperature humidity | TH | A3 | JEDEC-JESD22-A101 | 130°C/85%RH for 96 hours (pre and post ATE at R) | 77 | 3 | 0F/231 (231) | Pass SPIL, (ATK) |
| Preconditioning + temperature cycle | TC | A4 | JEDEC-JESD22-A104 | Ta = -55°C to +125°C for 1000 cycles (pre and post ATE at R and<br>                            H) | 77 | 3 | 0F/231 (231) | Pass SPIL, (ATK) |
| High temperature storage life | HTSL | A6 | JEDEC-JESD22-A103 | Ta = +150°C for 500 hours (pre and post ATE at R and H) | 77 | 3 | 0F/231 (231) | Pass SPIL, (ATK) |
| ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** | ***Test group B – accelerated                                    lifetime simulation tests*** |
| High temperature operating life | HTOL | B1 | JEDEC-JESD22-A108 | Tj = 125°C for 1000 hours (pre and post ATE at R, C, and H) | 77 | 3 | 0F/231 | – |
| Early life failure rate | ELFR | B2 | AEC-Q100-008 | Tj = 125°C for 48 hours (pre and post ATE at R and H) | 800 | 3 | 0F/2400 | – |
| NVM endurance, data retention, and operational life | EDR | B3 | – | – | – | – | – | Not applicable, no NVM memory on device |
| ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** | ***Test group C – package assembly                                    integrity tests*** |
| Wire bond shear | WBS | C1 | – | – | – | – | – | Not applicable, not a wirebonded package |
| Wire bond pull strength | WBPS | C2 | – | – | – | – | – | Not applicable, not a wirebonded package |
| Solderability | SD | C3 | – | – | – | – | – | Not applicable, not a leadframe package |
| Physical dimensions | PD | C4 | JESD22-B100 | Package outline drawing | 10 | 3 | 0F/30, (30) | CPK ≥ 1.67 SPIL, (ATK) |
| Solder ball shear | SBS | C5 | AEC-Q100-010 | 5 balls each from a min. of 10 devices, ≥ 300 g/ball for pad opening<br>                            350 μm | 10 | 3 | 0F/30, (30) | CPK ≥ 1.67 SPIL, (ATK) |
| Lead integrity | LI | C6 | – | – | – | – | – | Not applicable, not a leadframe package |
| ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** | ***Test group D – die fabrication                                    reliability tests*** |
| Electromigration | EM | D1 | JP001A | – | – | – | – | Pass |
| Time-dependent dielectric breakdown | TDDB | D2 | JP001A | – | – | – | – | Pass |
| Hot carrier injection | HCI | D3 | JP001A | – | – | – | – | Pass |
| Negative bias temperature instability | NBTI | D4 | JP001A | – | – | – | – | Pass |
| Stress migration | SM | D5 | JP001A | – | – | – | – | Pass |
| ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** | ***Test group E – electrical                                    verification tests*** |
| Pre- and post-stress electrical test | TEST | E1 | – | – | – | – | – | Pre and post ATE |
| ESD – human body model | HBM | E2 | AEC-Q100-002 | Pass target ±1 kV (pre and post ATE at R and H) | 3 | 1 | 0F/3 | – |
| ESD – Charged Device Model | CDM | E3 | AEC-Q100-011 | Pass target ±150 V (Pre and Post ATE at R & H) | 3 | 1 | 0F/3, (3) | Pass SPIL, (ATK) |
| Latch-up | LU | E4 | AEC-Q100-004 | Ta=105°C (Class II) for SOV (1.5X Vop Max) and I-Test (±105 mA) (Pre<br>                            and Post ATE at R & H) | 6 | 1 | 0F/6 | – |
| Electrical distributions | ED | E5 | – | – | – | – | – | Available for review |
| Fault grading | FG | E6 | AEC-Q100-007 | – | – | – | – | Available for review |
| Characterization | CHAR | E7 | – | – | – | – | – | Available for review |
| Electromagnetic compatibility | EMC | E9 | – | – | – | – | – | Not performed. System level test |
| Short circuit characterization | SC | E10 | – | – | – | – | – | Not applicable, not &gt;12 V or a power device |
| Soft error rate | SER | E11 | – | – | – | – | – | Leverage foundry simulation data |
| ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** | ***Test group F – defect screening                                    tests*** |
| Process average test | PAT | F1 | – | – | – | – | – | Available for review |
| Statistical bin/yield analysis | SBA | F2 | – | – | – | – | – | Available for review |
|  |  |  |  |  |  |  |  |  |

## Qualification sample description

Source: [https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html](https://docs.qualcomm.com/doc/80-73475-1/topic/part-reliability.html)

Table : Device characteristics

| Category | Definition |
| --- | --- |
| Device name | QCS8275 |
| Package type | FCBGA1326+HS |
| Package body size | 25.0 × 25.0 × 2.76 mm |
| Ball count | 1326 |
| Ball composition | SAC405 |
| Fab process | 4 nm |
| Supply sources (fab sites) | Samsung |
| Assembly sites | Amkor, Korea<br><br><br>                            <br>SPIL, Taiwan |
| Solder ball pitch | 0.9 mm |

Last Published: Jul 21, 2026

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